In Situ Annealing of Boron-Doped Amorphous Silicon Layers Using APCVD Technology

In this work, we developed an in situ annealing process to crystallize boron-doped amorphous silicon [a-Si(p+)] layers deposited by atmospheric pressure chemical vapour deposition (APCVD) to form boron-doped polycrystalline silicon [poly-Si(p+)] layers. The influence of the temperature profiles during a-Si(p+) inline deposition on structural,...

Nanorods grown by copper anodizing in sodium carbonate

Self-organized anodization of copper in 0.1 M Na2CO3 electrolyte was studied in order to obtain nanostructured oxide surface on the metal substrate. Linear sweep voltammetry (LSV) revealed that the most suitable voltage range for anodic film formation is from 3 to 31 V. In this range (except between 3 and 7 V), the oxide is formed as nanorods,...

Novel Doping Free Metal-oxide Carrier Selective Passivating Contacts for Solar Cells

Carrier selective passivating contact (CSC) is considered to be a promising direction for surface passivation research because it performs passivation for both non-contacted and contacted areas. Conventional heavy doping CSCs are subject to a few drawbacks such as significant Auger recombination, parasitic absorption, complicated processing and...

Morphology and photoluminescence of nanostructured oxides grown by copper passivation in aqueous potassium hydroxide solution

Copper foil was anodized in 1 M KOH at potentials ranging from −400 to −100 mV vs. Ag|AgCl electrode. Cyclic voltammetry showed a distinct peak with a maximum at around −150 mV. For anodizing at −100 and −200 mV, nanowires with diameters of ca. 19 and 24 nm respectively were found to be grown. Moreover, photoluminescence and X-ray diffraction...