Studying the nanostructure of a-Si:h solar cell absorber layers using positrion annihilation and neutron reflectometry

Hydrogenated Amorphous Silicon (a-Si:H) is a very promising solar cell material with a good potential to use in many applications, as it is cheap to produce, light-weight and flexible. However, upon prolonged exposure to light, the layers suffer from both metastable and irreversible changes (the Staebler-Wronski effect) that have a bad effect on...

Defect evolution during annealing of deformed FeSi alloys studied by positron annihilation spectroscopy

High silicon steel is widely used in electrical appliances. Alloying iron with silicon improves its magnetic performance. A silicon content up to 6.5 wt. % gives excellent magnetic properties such as high saturation magnetization, near zero magnetostriction and low iron loss in high frequencies. Their workability is greatly reduced by the...

Hydrogen interactions with silicon-on-insulator materials

The booming of microelectronics in recent decades has been made possible by the excellent properties of the Si/SiO2 interface in oxide on silicon systems.. This semiconductor/insulator combination has proven to be of great value for the semiconductor industry. It has made it possible to continuously increase the number of transistors per chip...

Precipitation of Silicon in a Solid Quenched Aluminium- ilicon (1.3 at yo) Alloy Studied by Positron Annihilation

Doppler broadening of the positron annihilation line was measured for quenched and aged specimens of an aluminium-silicon (1.29 at%Si) alloy. One set of specimens was aged at room temperature (set A) and one set was isochronally (t = 30 min) aged at temperatures ranging from 347 to 884 K (set B). The lineshape parameter S measured in the as...