Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement...

A comparison between PECVD and ALD for the fabrication of slot waveguide based sensors

We fabricated horizontal slot waveguides using two low temperature deposition techniques ensuring the full compatibility of the processes with CMOS technology. Slots width as thin as 45 nm with smooth slot surfaces can easily be fabricated with simple photolithographic steps. Fundamental TM-like slot mode in which the E-field is greatly enhanced...

Demonstration of PECVD SiC thermal delay lines for optical coherence tomography in the visible

Optical Coherence Tomography (OCT) has found applications in many fields of medicine and has a large potential for the optical biopsy of tumors. One of the technological challenges impairing faster adoption of OCT is the relative complexity of the optical instrumentation required, which translates into expensive and bulky setups. In this paper...