A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of ± 0.15 ∘ C (3 σ ) From − 55 ∘ C to 125 ∘ C

This article presents a sub-1 V bipolar junction transistor (BJT)-based temperature sensor that achieves both high accuracy and high energy efficiency. To avoid the extra headroom required by conventional current sources, the sensor’s diode-connected BJTs are biased by precharging sampling capacitors to the supply voltage and then discharging...

Digital backend for a resistor-based Wien Bridge temperature sensor

This thesis describes the design of a digital backend for a resistor-based temperature sensor realized in a 180nm CMOS process. The sensor’s analog frontend outputs a bitstream at 500kHz, which is then decimated and linearized with the help of 3 different polynomials, whose coefficients are obtained after a calibration process. A polynomial...