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Kuruganti, V.V. (author), Mazurov, Alexander (author), Seren, Sven (author), Isabella, O. (author), Mihailetchi, Valentin D. (author)In this work, we developed an in situ annealing process to crystallize boron-doped amorphous silicon [a-Si(p+)] layers deposited by atmospheric pressure chemical vapour deposition (APCVD) to form boron-doped polycrystalline silicon [poly-Si(p+)] layers. The influence of the temperature profiles during a-Si(p+) inline deposition on structural,...journal article 2023
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de Vrijer, T. (author), Roodenburg, Koos (author), Saitta, F.S. (author), Blackstone, Thijs (author), Limodio, G. (author), Smets, A.H.M. (author)An alloy based on the group IV elements germanium and tin has the potential of yielding an earth-abundant low bandgap energy semiconductor material with applications in the fields of micro-electronics, optics, photonics and photovoltaics. In this work, the first steps towards the plasma enhanced chemical vapour deposition (PECVD) processing of a...journal article 2022
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Vasić, Borislav (author), Ralević, Uroš (author), Zobenica, Katarina Cvetanović (author), Smiljanić, Milče M. (author), Gajić, Radoš (author), Spasenović, Marko (author), Vollebregt, S. (author)Chemical vapour deposition (CVD) is a promising method for producing large-scale graphene (Gr). Nevertheless, microscopic inhomogeneity of Gr grown on traditional metal substrates such as copper or nickel results in a spatial variation of Gr properties due to long wrinkles formed when the metal substrate shrinks during the cooling part of the...journal article 2020
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Balasubramanian, Manikandan (author)Coating deposition by Physical Vapour Deposition (PVD) on high strength steels is an important research project at TATA Steel - IJmuiden. The research is aimed at replacing the conventional hot-dip galvanisation process to obtain a defect-free coating without affecting their well-engineered properties. However, the annealing treatment of the...master thesis 2020
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Broeders, Theo (author)Steel is commonly coated to protect it from corrosion. One method of applying this is by using Physical Vapor Deposition, which can be done by using multiple jets. In this process jets next to each other interact. This paper's main aim is to investigate the interaction effect of two rarefied two-dimensional vapor jets in vacuum and how this is...bachelor thesis 2019
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Szmyt, Wojciech (author), Calame, Michel (author), Padeste, Celestino (author), Dransfeld, C.A. (author)We aim to enhance the carbon fibre (CF)-matrix interface by synthesizing carbon nanotubes (CNTs) on the surface of the CF, creating a hierarchical composite. A 12 nm thick aluminium oxide film applied by atomic layer deposition (ALD) provides protection of the CF from deterioration during CNT growth in a chemical vapour deposition (CVD)...conference paper 2019
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Ricciardella, F. (author), Vollebregt, S. (author), Kurganova, Evgenia (author), Giesbers, A.J.M. (author), Ahmadi, M. (author), Sarro, Pasqualina M (author)A method to grow multi layers graphene (MLG) just by thermal annealing in an inert atmosphere is reported. A molybdenum (Mo) catalyst layer is used in combination with a solid amorphous carbon (a-C) source on top or below the Mo layer. The formation of MLG directly on top of the catalyst substrate surface is confirmed by Raman spectroscopy,...journal article 2019
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Roebroeck, Anne (author)Vapour Distribution Boxes (VDBs) are used for continuous Physical Vapour Deposition (PVD) coating. The present study shows a Computational Fluid Dynamics (CFD) simulation of Zinc vapour inside a VDB, analyses the lateral Zinc vapour distribution and identifies regions in which phase change is likely to happen.bachelor thesis 2018
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Mohammadi, V. (author), Nihtianova, S. (author)In this chapter, a new technology for low‐temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near‐ideal LT PureB (pure boron) diodes with low, deep junction‐like saturation currents, allowing full integration of LT PureB photodiodes...book chapter 2016
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Vollebregt, S. (author), Ishihara, R. (author)Carbon nanotubes (CNT) have been proposed for many applications in integrated circuits (IC): ranging from transistors and interconnects to sensors and actuators. For these applications it is crucial to integrate CNT directly alongside electronics, something which has not been achieved before. In this work we demonstrate the direct growth of CNT...journal article 2016
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Zhu, S.E. (author), Ghatkesar, M.K. (author), Zhang, C. (author), Janssen, G.C.A.M. (author)We present a pressure sensor based on the piezoresistive effect of graphene. The sensor is a 100?nm thick, 280??m wide square silicon nitride membrane with graphene meander patterns located on the maximum strain area. The multilayer, polycrystalline graphene was obtained by chemical vapor deposition. Strain in graphene was generated by applying...journal article 2013
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Gaitas, A. (author)In this preliminary effort, a moving nano-heater directs a chemical vapor deposition reaction (nano-CVD) demonstrating a tip-based nanofabrication (TBN) method. Localized nano-CVD of copper (Cu) and copper oxide (CuO) on a silicon (Si) and silicon oxide (SiO2) substrate from gasses, namely sublimated copper acetylacetonate (Cu(acac)2), argon (Ar...journal article 2013
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Mohammadi, V. (author), De Boer, W.B. (author), Nanver, L.K. (author)In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Nanver, L.K. (author)Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified...journal article 2012
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Zonnevylle, A.C. (author), Hagen, C.W. (author), Kruit, P. (author), Valenti, M. (author), Schmidt-Ott, A. (author)Positioning of charged nanoparticles with the help of charge patterns in an insulator substrate is a known method. However, the creation of charge patterns with a scanning electron microscope for this is relatively new. Here a scanning electron microscope is used for the creation of localized charge patterns in an insulator, while a glowing wire...journal article 2009
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Vollebregt, S. (author)In integrated circuits the delay caused by interconnects, their power consumption, production and reliability are challenges to be solved. Using the third dimension for additional layers of transistor has been proposed as a solution to this problem by reducing the length of the interconnects. A problem in 3D integration is the creation of...master thesis 2009
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Cheynet, M.C. (author), Pokrant, S. (author), Tichelaar, F.D. (author), Rouvière, J.L. (author)Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by low-loss EELS analysis. The Eg values are then...journal article 2007
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Kong, J. (author), LeRoy, B.J. (author), Lemay, S.G. (author), Dekker, C. (author)We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature (800?°C) involved in the growth process poses challenging...journal article 2005
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- Schoonman, J. (author), Kelder, E.M. (author) journal article 1997
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- Moene, R. (author), Boon, H.T. (author), Schoonman, J. (author), Makkee, M. (author), Moulijn, J.A. (author) journal article 1996
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