Effects of natural and thermal oxidation on electronic and optical properties of monolayer WS2: a theoretical study

Tungsten disulfide (WS2) has recently attracted considerable attention owing to its excellent physical, chemical, electronic, and optical properties, leading to increased research into its applications in electronic and optoelectronic devices. However, the oxidation of 2D material affects significantly its optical and electronic properties...

Phononic crystals for suppressing crosstalk in ultrasonic flowmeters

Ultrasonic flowmeters that use transit-time ultrasonic transducers face measurement errors due to 'crosstalk,' whereby the working signal travels through the pipe wall and couplings, interfering with the signal from the fluid. Although various procedures have been proposed to solve the issue of crosstalk, they're limited to low-frequency...

A level set-based interface-enriched topology optimization for the design of phononic crystals with smooth boundaries

Phononic crystals can be designed to show band gaps—ranges of frequencies whose propagation is strongly attenuated in the material. In essence, their working principle is based on destructive interference of waves reflecting from the periodic arrangement of material interfaces (i.e., Bragg scattering). Consequently, capturing accurately the...

Phononic crystals’ band gap manipulation via displacement modes

Phononic crystal band gaps (BGs), which are realized by Bragg scattering, have a central frequency and width related to the unit cell's size and the impedance mismatch between material phases. BG tuning has generally been performed by either trial and error or by computational tools such as topology optimization. In either case, understanding...

First-Principles Calculation of Optoelectronic Properties in 2D Materials: The Polytypic WS₂ Case

The phenomenon of polytypism, namely unconventional crystal phases displaying a mixture of stacking sequences, represents a powerful handle to design and engineer novel physical properties in two-dimensional (2D) materials. In this work, we characterize from first-principles the optoelectronic properties associated with the 2H/3R polytypism...

Vertical SiC taper with a small angle fabricated by slope transfer method

In this Letter, a slope transfer method to fabricate vertical waveguide couplers is proposed. This method utilises wet etched Si as a mask, and takes advantage of dry etching selectivity between Si and SiC, to successfully transfer the profile from the Si master into SiC. By adopting this method, a <2° slope is achieved. Such a taper can...

Efficient Green Emission from Wurtzite Al_xIn_{1- x}P Nanowires

Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here...

Thermoluminescence as a Research Tool to Investigate Luminescence Mechanisms

Thermally stimulated luminescence (TSL) is known as a technique used in radiation dosimetry and dating. However, since the luminescence is very sensitive to the defects in a solid, it can also be used in material research. In this review, it is shown how TSL can be used as a research tool to investigate luminescent characteristics and underlying...

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...

I-V characteristics of in-plane and out-of-plane strained edge-hydrogenated armchair graphene nanoribbons

The effects of tensile strain on the current-voltage (I-V) characteristics of hydrogenated-edge armchair graphene nanoribbons are investigated by using DFT theory. The strain is introduced in two different ways related to the two types of systems studied in this work: in-plane strained systems (A) and out-of-plane strained systems due to bending...

Thermal-Diffusivity-Based Frequency References in Standard CMOS

In recent years, a lot of research has been devoted to the realization of accurate integrated frequency references. A thermal-diffusivity-based (TD) frequency reference provides an alternative method of on-chip frequency generation in standard CMOS technology. A frequency-locked loop locks the output frequency of an oscillator to the accurate...

A scattering model for surface-textured thin films

We present a mathematical model that relates the surface morphology of randomly surface-textured thin films with the intensity distribution of scattered light. The model is based on the first order Born approximation [see e.g., M. Born and E. Wolf, Principles of Optics, 7th ed. (Cambridge University Press, Cambridge, England, 1999) ] and on...

Electronic coupling of colloidal CdSe nanocrystals monitored by thin-film positron-electron momentum density methods

The effect of temperature controlled annealing on the confined valence electron states in CdSe nanocrystal arrays, deposited as thin films, was studied using two-dimensional angular correlation of annihilation radiation. A reduction in the intensity by ?35% was observed in a feature of the positron annihilation spectrum upon removal of the...

Transmission measurement of the photonic band gap of GaN photonic crystal slabs

A high-contrast-ratio (30 dB) photonic band gap in the near-infrared transmission of hole-type GaN two-dimensional photonic crystals (PhCs) is reported. These crystals are deeply etched in a 650 nm thick GaN layer grown on sapphire. A comparison of the measured spectrum with finite difference time domain simulations gives quantitative agreement...

Location of lanthanide impurity levels in the III-V semiconductor GaN

Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...

Evaluation of an Empirical Model to Estimate and Optimize Mechanical Properties of PECVD SiC Films

In this paper, we present a systematic investigation of the influence of the deposition parameters on the deposition rate, etch rate, and mechanical stress of SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. Among the relevant deposition parameters, the SiH4 gas flow rate, the main parameter to determine the Si...