In-situ reliability monitoring of power packages using a Thermal Test Chip

With an increasing demand for high-power electronics, the need to meet stringent automotive norms and better understand the critical failure mechanisms are crucial in order to improve their reliablity. To that end, we developed an in-situ reliability monitoring setup capable of actively measuring the thermal performance of the package during...

Compact Modeling of Physical Mechanisms Present in the Weak Breakdown Regime of Advanced Si and SiGe Bipolar Transistors

With the current increasing demand for faster and more reliable communication and computing electronic devices such as faster wireless communication networks, circuit designers are forced to carry out device optimization in order to achieve the maximum possible performance. To enable full circuit optimization, designers depend on compact models...

High-frequency noise modeling of Si(Ge) bipolar transistors

The design and the optimization of electronic systems often requires a detailed knowledge of the inherent noise generated within semiconductor active devices, constituting the core of such systems. Examples of applications in which noise is a key issue include receiver front-ends in radiofrequency (RF) and optoelectronic transmission systems,...

Verification of the non-local avalanche current model in mextram for advanced SiGe HBTs

To realize optimum performance, SiGe HBTs are typically designed with heavily doped implanted collectors. For practical circuits operating at either high collector current density (Jc) or high collector-base voltage (Vcb) avalanche multiplication is an important effects that must be accurately measured and modeled. For example in digital...

Advanced Breakdown Modeling for Solid-State Circuit Design

Modeling of the effects occurring outside the usual region of application of semiconductor devices is becoming more important with increasing demands set upon electronic systems for simultaneous speed and output power. Analog integrated circuit designers are forced to enter regimes of transistor operation that are close to or within the device...