Searched for: subject%3A%22deep%255C+level%255C+transient%255C+spectroscopy%22
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Pieters, B.E. (author)
At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film silicon used in this type of solar cells is in a...
doctoral thesis 2008
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Klaver, A. (author), Nádaždy, V. (author), Zeman, M. (author), Swaaiij, R.A.C.M.M. (author)
We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...
journal article 2006
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Nanu, M. (author), Boulch, F. (author), Schoonman, J. (author), Goossens, A. (author)
Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to antisite point defects and vacancies....
journal article 2005