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Cardoso Medeiros, G. (author)The Fin Field-Effect Transistor (FinFET) technology became the most promising approach to enable the downscaling of technological nodes below the 20 nm threshold. However, the introduction of new technology nodes for embedded memories such as SRAMs, especially for even smaller nodes such as 10 and 5 nm, gives rise to new manufacturing failure...doctoral thesis 2022
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Copetti, Thiago (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Poehls, Leticia Bolzani (author), Balen, Tiago (author)Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS...journal article 2021
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Copetti, Thiago (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Poehls, Leticia Bolzani (author), Balen, Tiago (author)Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS...conference paper 2020
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Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Wu, L. (author), Fieback, M. (author), Jenihhin, Maksim (author), Taouil, M. (author), Hamdioui, S. (author)Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always cause incorrect behavior, and therefore are easily detected by applying sequences of write and read operations. However, hard-to-detect (HTD) faults may not cause incorrect behavior, only parametric deviations. Detection of these faults is of...conference paper 2020