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Bouwmeester, D. (author)This dissertation centers around two topics: graphene nanoribbons (GNRs) and superconductors. The aim of this thesis is to work towards combine these two topics, in order to study how superconducting correlations interact with magnetic correlations within graphene nanoribbons, such as the magnetic edge states present in the zigzag edges of...doctoral thesis 2024
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Bouwmeester, D. (author), Ghiasi, T.S. (author), Borin Barin, Gabriela (author), Müllen, Klaus (author), Ruffieux, Pascal (author), Fasel, Roman (author), van der Zant, H.S.J. (author)Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we...journal article 2023
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Glasbeek, Arnoud (author)In agricultural studies it is often important to predict the performance of genetically different plants. To make sure predictions are done well, it is necessary to make sure they are not influenced by effects of the field on which they are planted. These field effects or spatial effects are in practice often quite complicated and can be due to...bachelor thesis 2022
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Liu, Dingshan (author)Spin qubit in semiconductor quantum dot arrays offers a promising platform for future scalable quantum computing with its small size and compatibility with modern semiconductor industry. To scale up the quantum dot arrays, one of the major challenges is the wiring bottleneck, as a high density of control lines might need to be integrated into a...master thesis 2021
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Braun, Oliver (author), Overbeck, Jan (author), El Abbassi, M. (author), Käser, Silvan (author), Furrer, Roman (author), Olziersky, Antonis (author), Flasby, Alexander (author), Borin Barin, Gabriela (author), Perrin, M.L. (author)Atomically precise graphene nanoribbons (GNRs) are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially...journal article 2021
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Dong, Xichao (author), Cui, Chang (author), Tian, Weiming (author), Li, Y. (author), Mounir, Melzi (author), Hu, Cheng (author)With the development trends of multistatic spaceborne synthetic aperture radar (SAR), geosynchronous SAR (GEO SAR) employing several formation-flying small satellites also has great potential for remote sensing. The small satellites can cooperate to acquire multi-channel data for moving target detection and parameter estimation in strong...journal article 2021
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Lee, Kookjin (author), Choi, Junhee (author), Kaczer, Ben (author), Grill, Alexander (author), Lee, Jae Woo (author), Van Beek, Simon (author), Lee, Jaewoo (author), Shin, D. (author), Lee, S. (author)In this study, high-performance few-layered ReS<sub>2</sub> field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS<sub>2</sub> FET having a trade-off of performance parameters is optimized using a compact model from analytical...journal article 2021
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Cardoso Medeiros, G. (author), Fieback, M. (author), Wu, L. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults result in test escapes, which lead to early in-field...journal article 2021
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dos Reis Vezo, Kevin (author), van der Maas, Maurice (author)Real-time cell culture media monitoring can be conducted by Organ-on-Chip (OoC) ion-sensitive floating-gate field-effect transistor based sensors (ISFGFET). A method of modelling the sensor is described and implemented in the Advanced Design System (ADS) design and simulation software. The model is validated using measurement data of the sensor...bachelor thesis 2020
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Hou, F. (author), Wang, Qidong (author), Chen, Min (author), Zhang, Kouchi (author), Ferreira, Jan Abraham (author), Wang, Wenbo (author), Ma, R. (author), Su, Meiying (author), Song, Yang (author)In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermo-mechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100...journal article 2020
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Westsson, E.E. (author), Picken, S.J. (author), Koper, G.J.M. (author)Magnetic field effects can provide a handle on steering chemical reactions and manipulating yields. The presence of a magnetic field can influence the energy levels of the active species by interacting with their spin states. Here we demonstrate the effect of a magnetic field on the electrocatalytic processes taking place on platinum-based...journal article 2020
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RinconVieiraLugarinhoMonteiro, A.M. (author)The realization of interfaces between different transition metal oxides has heralded a new era of materials and physics research. Notably, it enabled a uniquely diverse set of coexisting physical properties to be combined with an ever-increasing degree of experimental control. The primary focus of this thesis is the celebrated interface between...doctoral thesis 2019
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Papadopoulos, N. (author), Island, J.O. (author), van der Zant, H.S.J. (author), Steele, G.A. (author)Phase engineering of MoS&#x2082; transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS&#x2082; flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS&#x2082...journal article 2018
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Liu, Riqian (author)There are two existing surface passivation principles. Passivation of unsaturated Si bonds is called chemical passivation. Surface passivation can also be achieved by shielding the minority charge carriers from the semiconductor interface by means of an electric field. This method is referred to as field-effect passivation. <br/>To test the...master thesis 2017
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Molina-Mendoza, Aday J. (author), Island, J.O. (author), Paz, Wendel S. (author), Clamagirand, Jose Manuel (author), Ares, Jose Ramón (author), Flores, Eduardo (author), Leardini, Fabrice (author), Sánchez, Carlos (author), Agraït, Nicolás (author), Rubio-Bollinger, Gabino (author), van der Zant, H.S.J. (author), Ferrer, Isabel J. (author), Palacios, JJ (author), Castellanos-Gomez, Andres (author)The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...journal article 2017
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RinconVieiraLugarinhoMonteiro, A.M. (author), Groenendijk, D.J. (author), Manca, N. (author), Mulazimoglu, E. (author), Goswami, S. (author), Blanter, Y.M. (author), Vandersypen, L.M.K. (author), Caviglia, A. (author)Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions...journal article 2017
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Janissen, R. (author), Sahoo, Prasana K. (author), Santos, Clelton A. (author), Da Silva, Aldeliane M. (author), Von Zuben, Antonio A.G. (author), Souto, Denio E.P. (author), Costa, Alexandre D.T. (author), Celedon, Paola (author), Zanchin, Nilson I.T. (author), Almeida, Diogo B. (author), Oliveira, Douglas S. (author)Electrically active field-effect transistors (FET) based biosensors are of paramount importance in life science applications, as they offer direct, fast, and highly sensitive label-free detection capabilities of several biomolecules of specific interest. In this work, we report a detailed investigation on surface functionalization and...journal article 2017
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Zong, Z. (author), Babaie, M. (author), Staszewski, R.B. (author)This paper proposes a mm-wave frequency generation technique that improves its phase noise (PN) performance and power efficiency. The main idea is that a fundamental 20 GHz signal and its sufficiently strong third harmonic at 60 GHz are generated simultaneously in a single oscillator. The desired 60 GHz local oscillator (LO) signal is delivered...journal article 2016
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Ahmadi Mehr, S.A.R. (author), Tohidian, M. (author), Staszewski, R.B. (author)In this paper, we exploit an idea of coupling multiple oscillators to reduce phase noise (PN) to beyond the limit of what has been practically achievable so far in a bulk CMOS technology. We then apply it to demonstrate for the first time an RF oscillator that meets the most stringent PN requirements of cellular basestation receivers while...journal article 2016
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Nishiguchi, K. (author), Castellanos-Gomez, A. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...journal article 2015