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Yi, W. (author), Kiselev, A.A. (author), Thorp, J. (author), Noah, R. (author), Nguyen, B.M. (author), Bui, S. (author), Rajavel, R.D. (author), Hussain, T. (author), Gyure, M.F. (author), Kratz, P. (author), Qian, Q. (author), Manfra, M.J. (author), Pribiag, V.S. (author), Kouwenhoven, L.P. (author), Marcus, C.M. (author), Sokolich, M. (author)Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is...journal article 2015
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Vandersypen, L.M.K. (author), Elzerman, J.M. (author), Schouten, R.N. (author), Willems van Beveren, L.H. (author), Hanson, R. (author), Kouwenhoven, L.P. (author)We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by about 1% if the number of electrons on the dot changes by one. The QPC is voltage biased and the current is...journal article 2004
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Elzerman, J.M. (author), Hanson, R. (author), Willems van Beveren, L.H. (author), Vandersypen, L.M.K. (author), Kouwenhoven, L.P. (author)We demonstrate a method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a reservoir. The effective tunnel rate depends on the number and nature of the energy levels in the dot made...journal article 2004