A Fast Electrical Resistivity-Based Algorithm to Measure and Visualize Two-Phase Swirling Flows

Electrical resistance tomography (ERT) has been used in the literature to monitor the gas–liquid separation. However, the image reconstruction algorithms used in the studies take a considerable amount of time to generate the tomograms, which is far above the time scales of the flow inside the inline separator and, as a consequence, the...

Energy yield simulations of perovskite/c-Si tandem modules in real-world conditions

Performance of photovoltaic modules are widely expressed using their efficiency at Standard Test Conditions (STC). Although, real world conditions largely differ from this standard. Energy yield of photovoltaic modules at a certain location gives a clear indication of the performance of the module exposed to varying weather conditions....

Measurement of Pipe and Fluid Properties with a Matrix Array-based Ultrasonic Clamp-on Flow Meter

Current ultrasonic clamp-on flow meters consist of a pair of single-element transducers that are carefully positioned before use. This positioning process consists of manually finding the distance between the transducer elements, along the pipe axis, for which maximum signal-to-noise ratio (SNR) is achieved. This distance depends on the sound...

Compact Modeling of Physical Mechanisms Present in the Weak Breakdown Regime of Advanced Si and SiGe Bipolar Transistors

With the current increasing demand for faster and more reliable communication and computing electronic devices such as faster wireless communication networks, circuit designers are forced to carry out device optimization in order to achieve the maximum possible performance. To enable full circuit optimization, designers depend on compact models...

High-frequency noise modeling of Si(Ge) bipolar transistors

The design and the optimization of electronic systems often requires a detailed knowledge of the inherent noise generated within semiconductor active devices, constituting the core of such systems. Examples of applications in which noise is a key issue include receiver front-ends in radiofrequency (RF) and optoelectronic transmission systems,...

Advanced Breakdown Modeling for Solid-State Circuit Design

Modeling of the effects occurring outside the usual region of application of semiconductor devices is becoming more important with increasing demands set upon electronic systems for simultaneous speed and output power. Analog integrated circuit designers are forced to enter regimes of transistor operation that are close to or within the device...

VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements

Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide semiconductor field effect transistor) with hexagonal cells has been extracted by an original model based on electrical and optical measurements. Using microscopic observation for the ship of the device and by C-V characterization, the lateral device structure...