LinoSPAD2: A 512×1 linear SPAD camera with system-level 135-ps SPTR and a reconfigurable computational engine for time-resolved single-photon imaging

The LinoSPAD2 camera combines a 512×1 linear single-photon avalanche diode (SPAD) array with an FPGA-based photon-counting and time-stamping platform, to create a reconfigurable sensing system capable of detecting single photons. The read-out is fully parallel, where each SPAD is connected to a different FPGA input. The hardware can be...

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising a scalable solution to enable future quantum...

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P⁺/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...

Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology

We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions,...

A 1024 x 8, 700-ps Time-Gated SPAD Line Sensor for Planetary Surface Exploration With Laser Raman Spectroscopy and LIBS

A 1024 8 time-gated, single-photon avalanche diode line sensor is presented for time-resolved laser Raman spectroscopy and laser-induced breakdown spectroscopy. Two different chip geometries were implemented and characterized. A type-I sensor has a maximum photon detection efficiency of 0.3% and median dark count rate of 80 Hz at 3 V of excess...