MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons

Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we...

Substrate Transfer Technology for Stretchable Electronics

This paper focuses on the implementation of a new technique for the fabrication of stretchable electronic patches that can be used for medical applications. The technique is based on the Electronics on Plastics by Laser Release (EPlaR) technology which enables a one-step release of a stack of flexible/stretchable layers incorporating the active...

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and A1N Cooling

This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the...

Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts

Electrothermal Behavior of High-Frequency Silicon-On-Glass Transistors

In this thesis, research is focused on the investigation of electrothermal effects in high-speed silicon transistors. At high current levels the power dissipation in these devices can lead to heating of both the device itself and the adjacent devices. In advanced transistors these effects are becoming so pronounced that they are threatening to...