Atomic layer deposition (ALD) is known for its unparalleled control over layer thickness and 3D conformality and could be the future technique of choice to tailor the pore size of ceramic nanofiltration membranes. However, a major challenge in tuning and functionalizing a multichannel ceramic membrane is posed by its large internal pore volume, which needs to be evacuated during ALD cycling. This may require significant energy and processing time. This study presents a new reactor design, operating at atmospheric pressure, that is able to deposit thin layers in the pores of ceramic membranes. In this design, the reactor wall is formed by the industrial tubular ceramic membrane itself, and carrier gas flows are employed to transport the precursor and co-reactant vapors to the reactive surface groups present on the membrane surface. The layer growth for atmospheric-pressure ALD in this case proceeds similarly to that for state-of-the-art vacuum-based ALD. Moreover, for membrane preparation, this new reactor design has three advantages: (i) monolayers are deposited only at the outer pore mouths rather than in the entire bulk of the porous membrane substrate, resulting in reduced flow resistances for liquid permeation; (ii) an in-line gas permeation method was developed to follow the layer growth in the pores during the deposition process, allowing more precise control over the finished membrane; and (iii) expensive vacuum components and cleanroom environment are eliminated. This opens up a new avenue for ceramic membrane development with nano-scale precision using ALD at atmospheric pressure.@en

A fundamental understanding of the interplay between ligand-removal kinetics and metal aggregation during the formation of platinum nanoparticles (NPs) in atomic layer deposition of Pt on TiO₂ nanopowder using trimethyl(methylcyclo-pentadienyl)platinum(IV) as the precursor and O₂ as the coreactant is presented. The growth follows a pathway from single atoms to NPs as a function of the oxygen exposure (P_O2 × time). The growth kinetics is modeled by accounting for the autocatalytic combustion of the precursor ligands via a variant of the Finke–Watzky two-step model. Even at relatively high oxygen exposures (<120 mbar s) little to no Pt is deposited after the first cycle and most of the Pt is atomically dispersed. Increasing the oxygen exposure above 120 mbar s results in a rapid increase in the Pt loading, which saturates at exposures >> 120 mbar s. The deposition of more Pt leads to the formation of NPs that can be as large as 6 nm. Crucially, high P_O2 (≥5 mbar) hinders metal aggregation, thus leading to narrow particle size distributions. The results show that ALD of Pt NPs is reproducible across small and large surface areas if the precursor ligands are removed at high P_O2.

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We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 °C leads to surface nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.@en