M. Albani
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4 records found
1
Frequency and time domain UTD vertex diffraction
A heuristic solution and a step toward the exact one
Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InxGa1-xP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ8c-δ9v) to direct (δ7c-δ9v) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InxGa1-xP.
imaging applications. Simulations of the entire structure, including array and lens, are performed by combining a spectral
Green’s function approach and an accelerated physical optics method. The antenna characteristics are investigated over a 4:1
bandwidth parametrically varying the feed off-axis distance (x/R, y/R) and the lens extension length (L). Measurements from
prototype demonstrator are also presented to validate the method of analysis. ...
imaging applications. Simulations of the entire structure, including array and lens, are performed by combining a spectral
Green’s function approach and an accelerated physical optics method. The antenna characteristics are investigated over a 4:1
bandwidth parametrically varying the feed off-axis distance (x/R, y/R) and the lens extension length (L). Measurements from
prototype demonstrator are also presented to validate the method of analysis.