In an attempt to clarify the origin of the large critical current densitiesJ c observed in Laser Ablated and Sputtered YBa2Cu3O7−δ (YBCO) thin films, we make a systematic study of the low temperatureJ c in samples carefully analysed using STM and AFM.J c (B) is determined from torque-magnetometry performed in ring-patterned thin films. Epitaxial YBCO films nucleate in c-axis oriented single-crystalline islands with sizes ranging between 200 and 700 nm. We show thatJ c can be mainly explained by vortex pinning localised in the island boundaries.

Epitaxial YBa2Cu3O7-δ films nucleate in c-axis oriented single-crystalline islands. The surface of the single-crystalline SrTiO3 substrates exhibit steps of one third of the YBa2Cu3O7-δ c-axis. These steps generate a mismatch in the island boundaries between the CuO2 superconducting blocks. We show that these defect regions are strong candidates for being the pinning centers responsible for the large critical currents observed in Laser Ablated and Sputtered thin films.

The surface morphology of pulsed-laser deposited YBa2Cu3O7−δ films is investigated by STM AFM. Instead of spiral growth, a 2D nucleation and growth behaviour is observed. As we find these 2D nuclei also on high-oxygen pressure DC sputtered films grown at a much lower growth rate, we conclude that the supersaturation is not a decisive parameter for the predominance of either growth mode. Instead, we attribute the absence of growth spirals to the non-steady state growth conditions inherent to the pulsed nature of the laser-ablation process. Growth spirals only develop, if a non-vanishing diffusional flow of adatoms towards the step edge is maintained. The number of growth spirals observed on a films is therefore not necessarily a measure for the number of screw dislocations. After wet-etching the films in Br-ethanol, we observe that etch pits are formed consisting of concentric steps. We conclude that these pits are due to repetitive nucleation around linear defects. The etchpit density identified in this way is of the order of 1 per μm2.