In this study, we investigate a Schottky junction based on solution-processed multilayered graphene (MLG). We present a rectifying device obtained with a straightforward approach, that is drop-casting a few microliters of MLG solution simultaneously onto Si, Si-SiO2 and Si-SiO2-Cr/Au surface. Monitoring the modulation of Schottky barrier height while operating in reverse bias, we study the behavior of such prepared MLG-Si/junction (MLG-Si/J) when exposed to oxidizing atmosphere, especially to nitrogen oxide (NO2). We finally compare the sensing behavior of MLG-Si/J at 1 ppm of NO2 with that of a chemiresistor-based on similarly prepared solution-processed MLG. Our study thus opens the path towards low-cost highly sensitive graphene-based heterojunctions advantageously fabricated without any complexity in the technological process.

Humidity sensing is fundamental in some applications, as humidity can be a strong interferent in the detection of analytes under environmental conditions. Ideally, materials sensitive or insensitive towards humidity are strongly needed for the sensors used in the first or second case, respectively. We present here the sensing properties of multi-layered graphene (MLG) upon exposure to different levels of relative humidity. We synthesize MLG by chemical vapor deposition, as shown by Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Through an MLG-based resistor, we show that MLG is scarcely sensitive to humidity in the range 30%–70%, determining current variations in the range of 0.005%/%relative humidity (RH) well below the variation induced by other analytes. These findings, due to the morphological properties of MLG, suggest that defective MLG is the ideal sensing material to implement in gas sensors operating both at room temperature and humid conditions.