In the quest to create a 3D map of the universe, TU Delft recently started research on a Terahertz Integral Field Unit with Universal Nanotechnology or TIFUUN. These integral field units contain up to 217 spectrometer pixels (spaxels). Kinetic inductance detectors (KID) are dominating the area coverage of a spaxel. Reducing their size, allows for more spectral channels (called voxels), resulting in a higher spectral resolving power. A new type of KID showed up, which incorporates a parallel plate capacitor with a dielectric layer, significantly reducing the required space per component compared to the current state of the art. The performance of this capacitor is compromised by two-level system (TLS) noise in the dielectric layer. Previous literature made suggestions on what material characteristics influence TLS noise, called TLS indicators. These dielectric layers, in this case a-Si layers, are deposited in a plasma inside of an inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) machine. Plasma emission spectra were collected, using a spectrometer and an optical fiber, during the deposition of different recipes to investigate how the plasma spectrum is related to the room temperature (RT) TLS indicators of a-Si films. Voigt profile fits were made through key emission peaks in the spectral data. The ratios between the heights of the key emission peaks in the spectral data were compared to the TLS noise indicators. No statistically significant relation was found between these ratios and TLS noise indicators. These results suggest that the plasma spectrum during film deposition is unrelated to RT TLS indicators of a-Si films. This narrows the focus for future research to other factors influencing these indicators, bringing us closer to creating low TLS noise dielectric films.