The quantum transduction of an rf/microwave signal to the optical domain, and vice versa, paves the way for technologies that exploit the advantages of each domain to perform quantum operations. Since electro-optomechanical devices implement a simultaneous coupling of a mechanical oscillator to both an rf/microwave field and an optical field, they are suitable for the realization of a quantum transducer. The membrane-in-the-middle setup is a possible solution, once its vibrational mode is cooled down to ultra cryogenic temperature for achieving quantum operation. This work is focused on the mechanical characterization via an optical interferometric probe, down to T = 18 mK , of a loss-shielded metalized membrane designed for this purpose. A stroboscopic technique has been exploited for revealing a mechanical quality factor up to 64 × 10 6 at the lowest temperature. In fact, with continuous illumination and a cryostat temperature below 1 K , the heat due to optical absorption is not efficiently dissipated anymore, and the membrane remains hotter than its environment.

Thermal noise is a major obstacle to observing quantum behavior in macroscopic systems. To mitigate its effect, quantum optomechanical experiments are typically performed in a cryogenic environment. However, this condition represents a considerable complication in the transition from fundamental research to quantum technology applications. It is therefore interesting to explore the possibility of achieving the quantum regime in room-temperature experiments. In this work we test the limits of sideband-cooling vibration modes of a SiN membrane in a cavity optomechanical experiment. We obtain an effective temperature of a few millikelvins, corresponding to a phononic occupation number of around 100. We show that further cooling is prevented by the excess classical noise of our laser source, and we outline the road toward the achievement of ground state cooling.

Micro- and nanomechanical resonators play a prominent part in many sensing and signal processing platforms due to their capability to pervasively couple with a wide variety of physical systems. Particularly relevant is their embedding in advanced optomechanical setups, which has recently pioneered optically cooled mechanical oscillators toward the quantum regime. A frequently adopted experimental scheme exploits a thin, highly tensioned Si 3N 4 nanomembrane where the membrane's vibrations are dispersively coupled to the optical mode of a Fabry-Pérot cavity. A significant effort has been done into realizing high-quality factor membranes, considering that low mechanical loss represents a benchmark to operate in the elusive quantum regime. In this article, we compare two state-of-the-art SiN resonators, realized exploiting the dilution of the material's intrinsic dissipation and efficient solutions to fully isolate the membrane from the substrate. In particular, we examine and discuss the interplay between the edge and distributed dissipation and propose an analytical approach to evaluate the total intrinsic loss. Also, our analysis delves into the sensitivity of the devices to a point-like force and a uniform-density force field. These results provide meaningful guidelines for designing new ultra-coherent resonating devices.

Optomechanical SiN nano-oscillators in high-finesse Fabry-Perot cavities can be used to investigate the interaction between mechanical and optical degree of freedom for ultra-sensitive metrology and fundamental quantum mechanical studies. In this paper, we present a nano-oscillator made of a high-stress round-shaped SiN membrane with an integrated on-chip 3-D acoustic shield properly designed to reduce mechanical losses. This oscillator works in the range of 200 kHz to 5 MHz and features a mechanical quality factor of Q ≃ 10⁷ and a Q-frequency product in excess of 6.2 × 10¹² Hz at room temperature, fulfilling the minimum requirement for quantum ground-state cooling of the oscillator in an optomechanical cavity. The device is obtained by MEMS deep reactive-ion etching (DRIE) bulk micromachining with a two-side silicon processing on a silicon-on-insulator wafer. The microfabrication process is quite flexible such that additional layers could be deposited over the SiN membrane before the DRIE steps, if required for a sensing application. Therefore, such oscillator is a promising candidate for quantum sensing applications in the context of the emerging field of quantum technologies.