We investigate automated in situ optimization of the potential landscape in a quantum point contact device, using a 3×3 gate array patterned atop the constriction. Optimization is performed using the covariance matrix adaptation evolutionary strategy, for which we introduce a metric for how "steplike"the conductance is as the channel becomes constricted. We first perform the optimization of the gate voltages in a tight-binding simulation and show how such in situ tuning can be used to mitigate a random disorder potential. The optimization is then performed in a physical device in experiment, where we also observe a marked improvement in the quantization of the conductance resulting from the optimization procedure.

Semiconductor quantum dots (QDs) are a promising platform for multiple different qubit implementations, all of which are voltage controlled by programmable gate electrodes. However, as the QD arrays grow in size and complexity, tuning procedures that can fully autonomously handle the increasing number of control parameters are becoming essential for enabling scalability. We propose a bootstrapping algorithm for initializing a depletion-mode QD device in preparation for subsequent phases of tuning. During bootstrapping, the QD device functionality is validated, all gates are characterized, and the QD charge sensor is made operational. We demonstrate the bootstrapping protocol in conjunction with a coarse-tuning module, showing that the combined algorithm can efficiently and reliably take a cooled-down QD device to a desired global-state configuration in under 8 min, with a success rate of 96%. Finally, by following heuristic approaches to QD device initialization and combining the efficient ray-based measurement with the rapid radio-frequency reflectometry measurements, the proposed algorithm establishes a reference in terms of performance, reliability, and efficiency against which alternative algorithms can be benchmarked.