To improve the conversion efficiency of c-Si solar cells, it is crucial to quench the recombination losses at c-Si/metal interface. Such recombination losses are able to be reduced by using carrier-selective passivating contacts by means of hydrogenated amorphous silicon (a-Si:H) and poly-crystalline silicon (poly-Si)/tunneling silicon oxide (SiOx). In this thesis, a novel hybrid solar cell concept is presented. The novel structure combines the advantages of silicon heterojunction (SHJ) as front surface field (FSF) and poly-Si passivating contact as rear emitter. This project aims to improve the passivation quality of FSF composed of intrinsic & n-type (i/n) a-Si:H stacks and evaluate transparent conductive oxide (TCO) layer. Based on aforementioned optimization, the highest conversion efficiency of 20.5% was achieved (VOC = 704 mV, JSC = 39.5 mA/cm2 and FF = 73.8%).