This paper investigates the electrical properties of boron-doped diamond-graphene (B:DG) nanostructures, focusing on their semiconductor characteristics. These nanostructures are synthesized on fused silica glass and Si wafer substrates to compare their behaviour on different surfaces. A specialized measurement system, incorporating Python-automated code, was developed for an in-depth analysis of electronic properties under various contact configurations. This approach allowed for a detailed exploration of charge transport mechanisms within the nanostructures. The research highlights a decrease in resistivity with increased deposition time, as shown by Arrhenius plot analysis. This trend is linked to the formation and evolution of multi-wall graphene structures. SEM images showed nanowall structures formed more readily on amorphous fused silica substrates, enabling unrestricted growth. TOF-SIMS analysis revealed uneven boron atom distribution through the film depth. A significant finding is a reduction in conductive activation energy in samples grown in microwave plasma from 197 meV to 87 meV as deposition time increased from 5 to 25 min. Furthermore, the study identifies a shift in transport mechanisms from variable range hopping (VRH) below 170 K to thermally activated (TA) conduction above 200 K. These insights advance our understanding of the electronic behaviours in B:DG nanostructures and underscore their potential in electronic device engineering, opening new paths for future research and technological developments.

In this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 μm) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase. The developed boron-doped diamond (BDD) films are a promising semiconducting material for sensing and high-power electronic devices due to band gap engineering and thermal management feasibility. The increased boron concentration in the gas phase induces a decrease in the average grain size, consequently resulting in lower surface roughness. The BDD sheets grown with [B]/[C] of 20,000 ppm reveal the metallic conductivity while the lower doped samples show p-type semiconductor character. The charge transport at room temperature is dominated by the thermally activated nearest-neighbor hopping between boron acceptors through impurity band conduction. At low temperatures (<300 K), the Arrhenius plot shows a non-linear temperature dependence of the logarithmic conductance pointing towards a crossover towards variable range hopping. The activation energy at high temperatures obtained for lowly-doped sheets is smaller than for nanocrystalline diamond bonded to silicon, while for highly-doped material it is similar. Developed sheets were utilized to fabricate two types of diamond-on-graphene heterojunctions, where boron doping is the key factor for tuning the shape of the current-voltage characteristics. The graphene heterojunction with the low boron concentration diamond sheet resembles a Schottky junction behavior, while an almost Ohmic contact response is recorded with the highly doped BDD sheet of metallic conductivity. The free-standing diamond sheets allow for integration with temperature-sensitive interfaces (i.e. 2D materials or polymers) and pave the way towards flexible electronics devices.