Progress to date toward the Sustainable Development Goals (SDGs) has fallen short of expectations and is unlikely to fully meet 2030 targets. Past assessments have mostly focused on short- and medium-term evaluations, thus limiting the ability to explore the longer-term effects of systemic interactions with time lags and delay. Here we undertake global systems modeling with a longer-term view than previous assessments in order to explore the drivers of sustainability progress and how they could play out by 2030, 2050, and 2100 under different development pathways and quantitative targets. We find that early planning for systems change to shift from business as usual to more sustainable pathways is important for accelerating progress toward increasingly ambitious targets by 2030, 2050, and 2100. These findings indicate the importance of adopting longer-term timeframes and pathways to ensure that the necessary pre-conditions are in place for sustainability beyond the current 2030 Agenda.@en

Synergically combining their respective ultrahigh charge mobility and strong light absorption, graphene (Gr)/semiconductor heterostructures are promising building blocks for efficient optoelectronics, particularly photodetectors. Charge transfer (CT) across the heterostructure interface crucially determines device efficiency and functionality. Here, it is reported that hole-transfer processes dominate the ultrafast CT across strongly coupled double-perovskite Cs2AgBiBr6/graphene (DP/Gr) heterostructures following optical excitation. While holes are the primary charges flowing across interfaces, their transfer direction, as well as efficiency, show a remarkable dependence on the excitation wavelength. For excitation with photon energies below the bandgap of DPs, the photoexcited hot holes in Gr can compete with the thermalization process and inject into in-gap defect states in DPs. In contrast, above-bandgap excitation of DP reverses the hole-transfer direction, leading to hole transfer from the valence band of DPs to Gr. Experimental evidence that increasing the excitation photon energy enhances CT efficiency for both below- and above-bandgap photoexcitation regimes is further provided, unveiling the positive role of excess energy in enhancing interfacial CT. The possibility of switching the hole-transfer direction and thus the interfacial photogating field by tuning the excitation wavelength, provides a novel way to control the interfacial charge flow across a DP/Gr heterojunction.@en