Indium phosphide (InP) quantum dots (QDs) are promising heavy-metal-free materials for optoelectronics, but their redox stability, trap-state landscape, and charge carrier dynamics are not well understood. Here we investigate InP and InP/ZnSe/ZnS QD films with different ligands by using spectroelectrochemistry. For both core-only and core/shell/shell QD films, the absorption spectra remain unchanged during charging, indicating that injected charges do not populate the conduction or valence bands. InP/ZnSe/ZnS QD films with original ligands exhibit reversible photoluminescence (PL) modulation: an increase at modest cathodic potentials, followed by quenching at more negative potentials. Solid-state ligand exchange using ethylenediamine (2DA) and sodium sulfide (Na₂S) enhances conductivity and induces stronger PL changes at both cathodic and anodic potentials. These results are in line with the population of electron traps at modest cathodic potentials (i.e., near the midbandgap), suppressing nonradiative recombination and increasing the PL. At more negative potentials, electrochemical reactions of surface species result in new trap states quenching the PL. Our findings provide insights into the stability and trap-state-mediated carrier dynamics during electrochemical charging of InP-based QDs.

Charge transfer between quantum dots (QDs) and redox molecules is not well described by the Marcus theory, the hall-mark theory for charge transfer in molecular systems. The Marcus inverted region, where the rate decreases with increasing the free energy difference, has never been observed in QDs. The previously reported hypothesis for the absence of the Marcus inverted region in QDs is an Auger-assisted charge transfer pathway, which we refer to as the "Auger hypothesis". Here, we show that the Auger hypothesis does not hold to experimental tests. We measured the rate constants for two processes where Auger is either allowed or not: charge separation and charge recombination. We used ultrafast transient absorption spectroscopy to probe the rate of charge separation and recombination between PbS QDs and ferrocene derivatives ligands bound to their surface. We find that the rate constant for both charge separation and recombination increases by increasing the free energy difference, is temperature-independent, and increases with the number of molecular acceptors. All these results are against theoretical predictions for an Auger-assisted charge transfer pathway.

Control over the electron density and conductivity is a cornerstone of semiconductor technology. Here, we report electrochemical control over electron density and conductivity in films of InAs colloidal quantum dots (QDs) capped with ethanedithiol ligands. The quantum-confined twofold degenerate 1S1/2(e) electron state can be reversibly and completely filled. Increasing the electron population yields four bleach features in the optical-absorption spectrum associated transitions to the 1S1/2(e) state, and state-resolved electronic conductivity which follows the 1S1/2(e) density of states, reaching a maximum of 0.45 S/m at 0.5 electrons per QD. The absence of 1P(e) bleach features and state-resolved conductivity imply a wide separation between the 1S1/2(e) and 1P(e) states resulting in electronic transport between 1S(e) states exclusively. The reversible electrochemistry of InAs QDs films allows determination of the absolute energy levels. InAs QDs of 4.2 nm in edge length and capped with ethanedithiol ligands are natively n-doped with the Fermi level at -4.6 eV, the 1S1/2(e) state at -4.28 eV and the 1S3/2(h) state at -5.54 eV vs vacuum. This work establishes a way to precisely control the charge carrier density and conductivity and gives insights into the charge transport properties and electronic structure of InAs QD films, opening the possibility of making devices with InAs QDs in which the charge carrier density is precisely controlled electrochemically.

InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.

The efficiency of quantum dot (QD) light-emitting diodes is limited by inefficient hole injection into the valence levels of the QDs. Electrochemical doping, where mobile ions form electrical double layers (EDLs) at electrodes, offers a route to removing injection barriers. While QD light-emitting electrochemical cells (QLECs) have shown promise, prior studies relied on additional charge injection layers, complicating the study of charge injection into QDs. In this work, devices with a simple ITO/QD active layer/Al structure were fabricated using highly photoluminescent ligand-exchanged CdSe/CdS/ZnS QDs, poly(ethylene oxide), and lithium trifluoromethanesulfonate as electrolyte. We show that the dense QD films in these QLECs can be electrochemically doped, transport charges, and exhibit electroluminescence. Symmetrical cyclic voltammograms and operando photoluminescence measurements prove that these devices function as electrochemically doped LECs. Spectroelectrochemical experiments on separately n- and p-doped QD films indicate that hole injection remains the primary limitation in QLEC performance. These findings demonstrate that using EDLs to facilitate charge injection in QD light-emitting devices is promising, but significant challenges remain to be solved before electron and hole injections are balanced.

Electrochemical charging of films of semiconductor nanocrystals (NCs) allows precise control over their Fermi level and opens up new possibilities for use of semiconductor NCs in optoelectronic devices. Unfortunately, charges added to the semiconductor NCs are often lost due to electrochemical side reactions. In this work, we examine which loss processes can occur in electrochemically charged semiconductor NC films by comparing numerical drift-diffusion simulations with experimental data. Both reactions with impurities in the electrolyte solution, as well as reactions occurring on the surface of the nanomaterials themselves, are considered. We show that the Gerischer kinetic model can be used to accurately model the one-electron transfer between charges in the semiconductor NC and oxidant or reductant species in solution. Simulations employing the Gerischer model are in agreement with experimental results of charging of semiconductor NC films with ideal one-electron acceptors ferrocene and cobaltocene. We show that reactions of charges in the semiconductor NC film with redox species in solution are reversible when the reduction potential is in the conduction band of the semiconductor NC material but are irreversible when the reduction potential is in the band gap. Experimental charging of semiconductor NC films in the presence of oxygen is always irreversible in our system, even when the reduction potential of oxygen is in the conduction band of the semiconductor NC material. We show that the Gerischer model in combination with a coupled reversible-irreversible reaction mechanism can be used to model oxygen reduction. Finally, we model irreversible reduction reactions with the semiconductor NC material itself, such as reduction of ligands or surface ions. Simulations of semiconductor NC cyclic voltammograms in the presence of material reduction reactions strongly resemble experimental cyclic voltammograms of InP and CdSe NC films. This marks material reduction reactions at the semiconductor NC surface as a likely candidate for the irreversible behavior of these materials in electrochemical experiments. These results show that all reduction reactions with redox potentials in the band gap of semiconductor NCs must be suppressed in order to achieve stable charging of these materials.

Colloidal quantum dots (QDs) are semiconductor nanocrystals that have unique size-tunable optoelectronic properties and are suitable for wet processing. QD research aims to answer fundamental questions about the chemical and physical properties of nanoscale materials and use these tools for technological applications ranging from bio-imaging to quantum optics. At the core of this field is a set of synthetic, processing and analytical methods designed to produce QDs in uniform ensembles that meet the highest performance standards. This Primer reviews QD fabrication methods with a focus on the applications of QDs in printed optoelectronics and quantum optics. After outlining the current state-of-the-art QD syntheses, the experimental and computational analysis of QDs is discussed. These topics are then connected to the methodologies, processes and concepts required for developing QD-based photodetectors, light-emitting devices and quantum optics applications. Special attention is paid to challenges in reproducibility and current limitations of the field, such as the need to balance non-restricted material composition with high performing technology while achieving long-term stability in QD devices under operating conditions. Finally, the ongoing advancement in QD synthesis, precise atomic-level analysis and computational methodologies are highlighted as key drivers towards rational QD design, particularly in understanding how structural changes under loading impact QD properties.

Indium phosphide is the leading material for commercial applications of colloidal quantum dots. To date, however, the community has failed to achieve successful operation under strong excitation conditions, contrasting sharply with other materials. Here, we report unusual photophysics of state-of-the-art InP-based quantum dots, which makes them unattractive as a laser gain material despite a near-unity quantum yield. A combination of ensemble-based time-resolved spectroscopy over timescales from femtoseconds to microseconds and single-quantum-dot spectroscopy reveals ultrafast trapping of hot charge carriers. This process reduces the achievable population inversion and limits light amplification for lasing applications. However, it does not quench fluorescence. Instead, trapped carriers can recombine radiatively, leading to delayed—but bright—fluorescence. Single-quantum-dot experiments confirm the direct link between hot-carrier trapping and delayed fluorescence. Hot-carrier trapping thus explains why the latest generation of InP-based quantum dots struggle to support optical gain, although the quantum yield is near unity for low-intensity applications. Comparison with other popular quantum-dot materials—CdSe, Pb–halide perovskites, and CuInS₂—indicate that the hot-carrier dynamics observed are unique to InP.

Sequential thermal evaporation is an emerging technique for obtaining perovskite (PVK) photoactive materials for solar cell applications. Advantages include solvent-free processing, accurate stoichiometry control, and scalable processing. Nevertheless, the power conversion efficiency (PCE) of PVK solar cells (PSCs) fabricated by evaporation still lags behind that of solution-processed PSCs. Here, based on multi-cycle sequential thermal evaporation, we systematically investigate the effects of the post-deposition annealing temperature on the PVK properties in terms of surface morphology, opto-electronic properties, and device performance. We find that the average grain size increases to almost 1 μm and charge carrier mobilities exceed 50 cm2 V−1 s−1 when the annealing temperature is increased to 170 °C. We introduce a trace of PbCl2 to the multi-cycle sequential deposition to improve the absorber crystallinity at a lower annealing temperature of 150 °C, as evidenced by the XRD and PL analyses. The resulting PSC in a p–i–n structure yields a PCE of 18.5% with a cell area of 0.09 cm2. With the same deposition parameters, the cell area is scaled up to 0.36 cm2, achieving champion PCEs of 17.06%. This indicates the great potential of this technology for the commercialization of PSCs in the future.

Temporal dynamics of confined optical fields can provide valuable insights into light–matter interactions in complex optical systems, going beyond their frequency-domain description. Here, we present a new experimental approach based on interferometric autocorrelation (IAC) that reveals the dynamics of optical near-fields enhanced by collective resonances in periodic metasurfaces. We focus on probing the resonances known as waveguide-plasmon polaritons, which are supported by plasmonic nanoparticle arrays coupled to a slab waveguide. To probe the resonant near-field enhancement, our IAC measurements make use of enhanced two-photon excited luminescence (TPEL) from semiconductor quantum dots deposited on the nanoparticle arrays. Thanks to the incoherent character of TPEL, the measurements are only sensitive to the fundamental optical fields and therefore can reveal clear signatures of their coherent temporal dynamics. In particular, we show that the excitation of a high-Q collective resonance gives rise to interference fringes at time delays as large as 500 fs, much greater than the incident pulse duration (150 fs). Based on these signatures, the basic characteristics of the resonances can be determined, including their Q factors, which are found to exceed 200. Furthermore, the measurements also reveal temporal beating between two different resonances, providing information on their frequencies and their relative contribution to the field enhancement. Finally, we present an approach to enhance the visibility of the resonances hidden in the IAC curves by converting them into spectrograms, which greatly facilitates the analysis and interpretation of the results. Our findings open up new perspectives on time-resolved studies of collective resonances in metasurfaces and other multiresonant systems.

The optoelectronic properties of colloidal quantum dots (cQDs) depend critically on the absolute energy of the conduction and valence band edges. It is well known these band-edge energies are sensitive to the ligands on the cQD surface, but it is much less clear how they depend on other experimental conditions, like solvation. Here, we experimentally determine the band-edge positions of thin films of PbS and ZnO cQDs via spectroelectrochemical measurements. To achieve this, we first carefully evaluate and optimize the electrochemical injection of electrons and holes into PbS cQDs. This results in electrochemically fully reversible electron injection with >8 electrons per PbS cQDs, allowing the quantitative determination of the conduction band energy for PbS cQDs with various diameters and surface compositions. Surprisingly, we find that the band-edge energies shift by nearly 1 eV in the presence of different solvents, a result that also holds true for ZnO cQDs. We argue that complexation and partial charge transfer between solvent and surface ions are responsible for this large effect of the solvent on the band-edge energy. The trend in the energy shift matches the results of density functional theory (DFT) calculations in explicit solvents and scales with the energy of complexation between surface cations and solvents. As a first approximation, the solvent Lewis basicity can be used as a good descriptor to predict the shift of the conduction and valence band edges of solvated cQDs.

Indium phosphide (InP) quantum dots (QDs) are considered the most promising alternative for Cd and Pb-based QDs for lighting and display applications. However, while core-only QDs of CdSe and CdTe have been prepared with near-unity photoluminescence quantum yield (PLQY), this is not yet achieved for InP QDs. Treatments with HF have been used to boost the PLQY of InP core-only QDs up to 85%. However, HF etches the QDs, causing loss of material and broadening of the optical features. Here, we present a simple postsynthesis HF-free treatment that is based on passivating the surface of the InP QDs with InF_3. For optimized conditions, this results in a PLQY as high as 93% and nearly monoexponential photoluminescence decay. Etching of the particle surface is entirely avoided if the treatment is performed under stringent acid-free conditions. We show that this treatment is applicable to InP QDs with various sizes and InP QDs obtained via different synthesis routes. The optical properties of the resulting core-only InP QDs are on par with InP/ZnSe/ZnS core-shell QDs, with significantly higher absorption coefficients in the blue, and with potential for faster charge transport. These are important advantages when considering InP QDs for use in micro-LEDs or photodetectors.

Mixed Sn-Pb halide perovskites are promising absorber materials for solar cells due to the possibility of tuning the bandgap energy down to 1.2-1.3 eV. However, tin-containing perovskites are susceptible to oxidation affecting the optoelectronic properties. In this work, we investigated qualitatively and quantitatively metastable oxygen-induced doping in isolated ASn_xPb_1-xI₃ (where A is methylammonium or a mixture of formamidinium and cesium) perovskite thin films by means of microwave conductivity, structural and optical characterization techniques. We observe that longer oxygen exposure times lead to progressively higher dark conductivities, which slowly decay back to their original levels over days. Here oxygen acts as an electron acceptor, leading to tin oxidation from Sn²⁺ to Sn⁴⁺ and creation of free holes. The metastable oxygen-induced doping is enhanced by exposing the perovskite simultaneously to oxygen and light. Next, we show that doping not only leads to the reduction in the photoconductivity signal but also induces long-term effects even after loss of doping, which is thought to derive from consecutive oxidation reactions leading to the formation of defect states. On prolonged exposure to oxygen and light, optical and structural changes can be observed and related to the formation of SnO_x and loss of iodide near the surface. Our work highlights that even a short-term exposure to oxygen immediately impairs the charge carrier dynamics of the perovskite, while structural perovskite degradation is only noticeable upon long-term exposure and accumulation of oxidation products. Hence, for efficient solar cells, exposure of mixed Sn-Pb perovskites to oxygen during production and operation should be rigorously blocked.

Lead halide perovskites have attracted significant attention for their wide-ranging applications in optoelectronic devices. A ubiquitous element in these applications is that charging of the perovskite is involved, which can trigger electrochemical degradation reactions. Understanding the underlying factors governing these degradation processes is crucial for improving the stability of perovskite-based devices. For bulk semiconductors, the electrochemical decomposition potentials depend on the stabilization of atoms in the lattice-a parameter linked to the material’s solubility. For perovskite nanocrystals (NCs), electrochemical surface reactions are strongly influenced by the binding equilibrium of passivating ligands. Here, we report a spectro-electrochemical study on CsPbBr₃ NCs and bulk thin films in contact with various electrolytes, aimed at understanding the factors that control cathodic degradation. These measurements reveal that the cathodic decomposition of NCs is primarily determined by the solubility of surface ligands, with diminished cathodic degradation for NCs in high-polarity electrolyte solvents where ligand solubilities are lower. However, the solubility of the surface ligands and bulk lattice of NCs are orthogonal, such that no electrolyte could be identified where both the surface and bulk are stabilized against cathodic decomposition. This poses inherent challenges for electrochemical applications: (i) The electrochemical stability window of CsPbBr₃ NCs is constrained by the reduction potential of dissolved Pb²⁺ complexes, and (ii) cathodic decomposition occurs well before the conduction band can be populated with electrons. Our findings provide insights to enhance the electrochemical stability of perovskite thin films and NCs, emphasizing the importance of a combined selection of surface passivation and electrolyte.

Synergically combining their respective ultrahigh charge mobility and strong light absorption, graphene (Gr)/semiconductor heterostructures are promising building blocks for efficient optoelectronics, particularly photodetectors. Charge transfer (CT) across the heterostructure interface crucially determines device efficiency and functionality. Here, it is reported that hole-transfer processes dominate the ultrafast CT across strongly coupled double-perovskite Cs₂AgBiBr₆/graphene (DP/Gr) heterostructures following optical excitation. While holes are the primary charges flowing across interfaces, their transfer direction, as well as efficiency, show a remarkable dependence on the excitation wavelength. For excitation with photon energies below the bandgap of DPs, the photoexcited hot holes in Gr can compete with the thermalization process and inject into in-gap defect states in DPs. In contrast, above-bandgap excitation of DP reverses the hole-transfer direction, leading to hole transfer from the valence band of DPs to Gr. Experimental evidence that increasing the excitation photon energy enhances CT efficiency for both below- and above-bandgap photoexcitation regimes is further provided, unveiling the positive role of excess energy in enhancing interfacial CT. The possibility of switching the hole-transfer direction and thus the interfacial photogating field by tuning the excitation wavelength, provides a novel way to control the interfacial charge flow across a DP/Gr heterojunction.

Although density functional theory (DFT) calculations have been crucial in our understanding of colloidal quantum dots (QDs), simulations are commonly carried out on QD models that are significantly smaller than those generally found experimentally. While smaller models allow for efficient study of local surface configurations, increasing the size of the QD model will increase the size or number of facets, which can in turn influence the energetics and characteristics of trap formation. Moreover, core-shell structures can only be studied with QD models that are large enough to accommodate the different layers with the correct thickness. Here, we use DFT calculations to study the electronic properties of QDs as a function of size, up to a diameter of ∼4.5 nm. We show that increasing the size of QD models traditionally used in DFT studies leads to a disappearance of the band gap and localization of the HOMO and LUMO levels on facet-specific regions of the QD surface. We attribute this to the lateral coupling of surface orbitals and the formation of surface bands. The introduction of surface vacancies and their a posteriori refilling with Z-type ligands leads to surface reconstructions that widen the band gap and delocalize both the HOMO and LUMO. These results show that the surface geometry of the facets plays a pivotal role in defining the electronic properties of the QD.

In recent years, quantum dots (QDs) have emerged as bright, color-tunable light sources for various applications such as light-emitting devices, lasing, and bioimaging. One important next step to advance their applicability is to reduce particle-to-particle variations of the emission properties as well as fluctuations of a single QD’s emission spectrum, also known as spectral diffusion (SD). Characterizing SD is typically inefficient as it requires time-consuming measurements at the single-particle level. Here, however, we demonstrate multiparticle spectroscopy (MPS) as a high-throughput method to acquire statistically relevant information about both fluctuations at the single-particle level and variations at the level of a synthesis batch. In MPS, we simultaneously measure emission spectra of many (20-100) QDs with a high time resolution. We obtain statistics on single-particle emission line broadening for a batch of traditional CdSe-based core-shell QDs and a batch of the less toxic InP-based core-shell QDs. The CdSe-based QDs show significantly narrower homogeneous line widths, less SD, and less inhomogeneous broadening than the InP-based QDs. The time scales of SD are longer in the InP-based QDs than in the CdSe-based QDs. Based on the distributions and correlations in single-particle properties, we discuss the possible origins of line-width broadening of the two types of QDs. Our experiments pave the way to large-scale, high-throughput characterization of single-QD emission properties and will ultimately contribute to facilitating rational design of future QD structures.

Owing to their tunable band gap, high absorption coefficient, narrow emission linewidths and unrestricted composition, InP-based colloidal quantum dots (QDs) have become industrially relevant for visible and near-infrared photonic technologies. Although their development has so far been strongly driven by their suitability for green and red light-emitting diodes, the spectrum of applications for this class of materials is much broader. This Review covers the multidisciplinary field of InP-based QDs from its genesis in the mid-1990s to date, drawing on relevant knowledge from other classes of QDs and from III–V semiconductors as a whole. We discuss the optoelectronic properties of InP QDs, their fabrication, their defects and passivation strategies and the design of InP-based QD heterostructures. Finally, we outline the technological status of these QDs for various photonic applications.

Electrochemical charging of nanocrystal films opens up new possibilities for designing quantum dot-based device structures, but a solid theoretical framework of this process and its limitations is lacking. In this work, drift-diffusion simulations are employed to model the charging of nanocrystal films and gain insight into the electrochemical doping process. Through steady state simulations it is shown that the Fermi level and doping density in the nanocrystal film depend on the concentration of the electrolyte in addition to the value of the applied potential. Time-resolved simulations reveal that charging is often limited by transport of electrolyte ions. However, ion transport in the film is dominated by drift, rather than diffusion, and the concentration profile of ions differs substantially from concentration profiles of diffusing redox species at flat electrodes. Classical electrochemical theory cannot be used to model this type of mass transport limited behavior in films of nanocrystals, so a new model is developed. We show that the Randles-Ševčík equation, which is derived for electrochemical species diffusing in solution, but is often applied to films as well, results in a significant underestimation of the diffusion coefficients of the charge compensating electrolyte ions.

Understanding the interplay between the kinetics and energetics of photophysical processes in perovskite-chromophore hybrid systems is crucial for realizing their potential in optoelectronics, photocatalysis, and light-harvesting applications. By combining steady-state optical characterizations and transient absorption spectroscopy, we have investigated the mechanism of interfacial charge transfer (CT) between colloidal CsPbBr₃ nanoplatelets (NPLs) and surface-anchored perylene derivatives and have explored the possibility of controlling the CT rate by tuning the driving force. The CT driving force was tuned systematically by attaching acceptors with different electron affinities and by varying the bandgap of NPLs via thickness-controlled quantum confinement. Our data show that the charge-separated state is formed by selectively exciting either the electron donors or acceptors in the same system. Upon exciting attached acceptors, hole transfer from perylene derivatives to CsPbBr₃ NPLs takes place on a picosecond time scale, showing an energetic behavior in line with the Marcus normal regime. Interestingly, such energetic behavior is absent upon exciting the electron donor, suggesting that the dominant CT mechanism is energy transfer followed by ultrafast hole transfer. Our findings not only elucidate the photophysics of perovskite-molecule systems but also provide guidelines for tailoring such hybrid systems for specific applications.