Throughout the development of silicon heterojunction (SHJ) solar cells, the transparent conductive oxide has been regarded as an essential component of their front electrode, facilitating lateral charge transport of photogenerated carriers toward the front metal grid fingers. In rear junction (RJ)-SHJ solar cells, the (n)c-Si bulk is known to support the lateral electron transport at maximum power point injection level, provided that the contact resistance of the front contact stack is sufficiently low. This enables experimental RJ-SHJ solar cell architectures featuring a localized front carrier-selective passivating contact exclusively covering the area contacted by the metal grid. Herein, a top-down approach to the synthesis of this type of architecture is studied and its optical and electrical performance applied to different (n)-type contacts are investigated. Additionally, the potential of the localized contact architecture through Cu-plated RJ-SHJ solar cells is demonstrated. These solar cell demonstrators feature high short-circuit current density of 40.5 mA cm⁻², without significantly compromising their open-circuit voltage or fill factor, enabling efficiencies well above 23%, a 2%_abs improvement compared to their state before localization of the front contact.

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Bifacial perovskite/silicon solar cells can combine the advantages of tandem technology (high efficiencies) and bifacial modules (additional received irradiance from the rear) to increase the energy yield of photovoltaic (PV) systems further. In literature, it has already been shown that for two-terminal tandems this would require a lower bandgap energy (E_g) for the perovskite cell, as the rear irradiance increases the current in the bottom cell creating a current mismatch, if this is not considered during optimization. This work expands on bifacial two-terminal tandem optimization by considering aspects not included before. Besides the E_g, the thickness (d) of the perovskite is also optimized, as this also affects the current matching. Additionally, this work studies the trends in different energy losses of the PV module to better understand what affects the optimal perovskite cell. Our simulations show that the optimal E_g is 1.61–1.65 eV and the optimal d is 650–750 nm, which agrees with the observations in literature. The optimal E_g and d are mostly a trade-off between mismatch and thermalization losses, meaning that the mismatch losses should not be fully minimized. Additionally, the irradiance from the rear side is converted less efficiently than the front side irradiance due to larger thermalization and reflection losses. Therefore, the energy yield of bifacial tandem modules, compared to monofacial tandem ones, only increases for large ground albedo. Finally, our results show that the bifacial tandems have over a 25% gain in energy yield compared to bifacial single junction modules and up to 5% gain compared to monofacial tandem modules.

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Photovoltaic modules are typically not optimized for conditions of partial shading. One proposed approach to improve their shade tolerance is to implement maximum power point tracking on different strings of cells within the modules. However, this approach increases the demand for sub-module power converters, which poses a challenge. To address this, researchers have suggested integrating power electronic components directly into the module laminate, or even within the solar cells themselves. Despite these advancements, limited research has focused on integrating the most bulky component: the inductor. This study investigates through simulations whether planar air-core inductors can yield the required properties to support sub-module power conversion. The simulated inductors have an area that is as large as an industrial crystalline silicon solar cell. First, it is shown how the interplay between the different design parameters, such as track spacing, track width, number of turns, and middle gap size, plays an important role in the inductor properties at high frequency. The coil geometries that are simulated yield inductance values between 0.3 μH and 3.2 μH. Subsequently, the feasibility of implementing these inductors into an exemplary DC–DC boost converter is evaluated. To adequately reduce the ripple current, a significant switching frequency of at least several hundred kHz is required. Additionally, at 500 kHz, an inductor thickness of around 0.5 mm is necessary to keep the ohmic losses in the inductor below 2% of the total generated power in standard test conditions. While demonstrating feasible combinations, these findings also present significant challenges.@en

A thorough understanding of the small-signal response of solar cells can reveal intrinsic device characteristics and pave the way for innovations. This study investigates the impedance of crystalline silicon PN junction devices using TCAD simulations, focusing on the impact of frequency, bias voltage, and the presence of a low–high (LH) junction. It is shown that the PN junction exhibits the behavior of a parallel resistor–capacitor circuit (RC-loop) with fixed element values at low frequencies, but undergoes relaxation in both resistance R_j and capacitance C_j as frequency increases. Moreover, it is revealed that the addition of a LH junction impacts the impedance by altering R_j, C_j, and the series resistance R_s. Finally, while various publications on solar-cell impedance model the LH junction using an RC-loop, the findings in this study indicate that such a model does not accurately represent the underlying physics. Instead, this approach is likely compensating for the frequency-dependent behavior of R_j and C_j.

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Photovoltaic (PV) to virtual bus parallel differential power processing (PDPP) architecture can mitigate mismatch losses among PV strings. This article presents a comprehensive dynamic analysis by deriving a small-signal model of the PDPP architecture based on its state space model. Subsequently, the corresponding transfer functions and frequency response are obtained, offering valuable insights into the dynamic behavior of the architecture. To validate the accuracy of the derived model, the frequency response has also been achieved by observed data from both PLECS simulation and experiment through system identification. Besides, this article discusses the design considerations of the discrete controllers' parameters for both virtual and intermediate bus voltages and studies the stability of the architecture. Experimental measurements confirm the ability of the central controller to stabilize the virtual bus voltage to the desired level within 0.6 seconds, while the intermediate bus voltages settle within 15 ms, enabling proper maximum power point tracking of each PV string.

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Polycrystalline silicon (poly-Si) carrier-selective passivating contacts (CSPCs), featuring high photoconversion efficiency (PCE) and cost-effectiveness, have emerged as a promising approach for high-efficiency crystalline silicon (c-Si) solar cells. To minimize parasitic absorption losses induced by doped poly-Si window layers, wide bandgap oxygen-alloyed poly-Si (poly-SiO_x) layers are developed. However, challenges persist in achieving excellent surface passivation for boron-doped poly-SiO_x contact stacks, likely caused by boron diffusion during annealing and the reduced doping concentration resulting from lower crystallinity as oxygen content increases. In this study, we investigate the impact on the passivating contact structure and solar cell performance of a 10-nm thick intrinsic hydrogenated amorphous silicon buffer layer with varying oxygen content (a-Si (O_x):H) deposited by plasma-enhanced chemical vapor deposition (PECVD), and placed between the tunneling silicon oxide (SiO_x) and the poly-SiO_x (p⁺). After the hydrogenation step, we obtain both high passivation quality with implied open circuit voltage (iV_oc) of 728.3 mV and low contact resistivity (ρ_c) of 59.18 mΩ cm² on polished surface for oxygen-free a-Si:H buffer layer. These improvements can be attributed to the appropriate thickness of the tunnel oxide and confirmed by transmission electron microscopy (TEM) images, to higher crystallinity of the buffer layer, which facilitates more efficient doping in the buffer layer. This is evidenced by energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS) results. At the device level, a front-side textured, rear-side flat, rear junction poly-SiO_x/poly-SiO_x solar cell on n-type c-Si wafer, an efficiency improvement can be observed from 3.55 % without a PECVD buffer layer to 18.9 % with an oxygen-free a-Si:H PECVD buffer layer. The impact of the buffer layer crystallinity on cell performance is further demonstrated by deploying a 10-nm thick LPCVD buffer layer, which facilitates an efficiency of 21.15 % for the same device structure.

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The impedance of solar cells can be leveraged for a variety of innovative applications. However, for the continued advancement of such applications, it is crucial to understand how the impedance varies during practical operation. This work characterizes the impedance of modern crystalline silicon solar cells across different bias voltages and under varying illumination and temperature conditions. It is found that for a given bias voltage, variations in temperature have a notably stronger impact on PN junction impedance than changes in irradiance. However, during maximum power point (MPP) tracking, variations in irradiance have a larger influence on the PN junction impedance than temperature variations. This is related to the shifting operating voltage during operation. Furthermore, it is shown that the capacitance during practical operation can strongly vary for different solar cells. For instance, the areal MPP capacitance values of the two cells tested in this study at 0.1 sun irradiance and a temperature of 30 °C were 0.283 μF/cm2 and 20.2 μF/cm2, a 71-fold difference. Conversely, the range of the MPP diffusion resistance was found to be highly similar for different cells. The results of this study enhance the understanding of solar-cell impedance and have a broad applicability.@en

Solar farm installers generally struggle with the allocation of irradiance sensors throughout the plant area, which are essential for monitoring purposes. Despite the existence of the International Electrotechnical Commission guidelines for photovoltaic (PV) plant monitoring, no specific guidance is provided when it comes to allocating sensors. This can be especially problematic for solar farms in hilly terrain. In this work, a software tool is built to allocate horizontal and in-plane irradiance sensors. Additionally, advice on the optimum number of sensors and the prevented error is provided based on the layout of the farm. The methodology consists of calculating the irradiance at every point of the solar farm area and finding the one closest to the average. This average is computed differently depending on the sensor type and monitoring purpose. A modification of the BRL irradiance decomposition model is also proposed to reduce the bias of the original model. The software has been applied to two case studies of existing solar farms in hilly areas in Greece and Germany, showing its applicability for real case scenarios in different climates and geological landscapes. The runtime of the software tool is mainly a function of solar farm size and the land morphology of its location. This methodology has been only developed for monofacial fixed-tilted PV farms.

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Positive Energy Districts (PEDs) are integral to achieving sustainable urban development by enhancing energy self-sufficiency and reducing carbon emissions. This paper explores energy balance calculations in four diverse case study districts within different climatic conditions—Fiat Village in Settimo Torinese (Italy), Großschönau (Austria), Beursplain in Amsterdam (Netherlands), and Lunca Pomostului in Reşiţa (Romania)—as part of the SIMPLY Positive project. Each district faces unique challenges, such as outdated infrastructure or heritage protection, which we address through tailored strategies including building renovations and the integration of renewable energy systems. Additionally, we employ advanced simulation methodologies to assess energy performance. Simulation results highlight the significance of innovative technologies like photovoltaic-thermal (PVT) systems, application of demand-side actions, and flexible grid usage. Furthermore, mobility assessments and resident-driven initiatives demonstrate the critical role of community engagement in reducing carbon footprints. This study underscores the adaptability of PED frameworks across varied urban contexts and provides actionable insights for scaling similar strategies globally, supporting net-zero energy targets.@en

Interdigitated back contact (IBC) architecture can yield among the highest silicon wafer-based solar cell conversion efficiencies. Since both polarities are realized on the rear side, there is a definite need for a patterning step. Some of the common patterning techniques involve photolithography, inkjet patterning, and laser ablation. This work introduces a novel patterning technique for structuring the rear side of IBC solar cells using the enhanced oxidation characteristics under the locally laser-doped n⁺⁺ back surface field (BSF) regions with high-phosphorous surface concentrations. Phosphosilicate glass layers deposited via POCl₃ diffusion serve as a precursor layer for the formation of local heavily laser-doped n⁺⁺ BSF regions. The laser-doped n⁺⁺ BSF regions exhibit a 2.6-fold increase in oxide thickness compared to the nonlaser-doped n⁺ BSF regions after undergoing high-temperature wet thermal oxidation. The utilization of oxide thickness selectivity under laser-doped and nonlaser-doped regions serves two purposes in the context of the IBC solar cell, first patterning rear side and second acting as a masking layer for the subsequent boron diffusion. Proof-of-concept solar cells are fabricated using this novel patterning technique with a mean conversion efficiency of 20.41%.

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Two terminal (2T) perovskite/copper-indium-gallium-selenide (CIGS) tandem solar cells combine high conversion efficiency with lightweight flexible substrates which can decrease manufacturing and installation costs. In order to improve the power conversion efficiency of these tandem solar cells, the use of advanced simulation tools is crucial to estimate the loss mechanisms. In this regard, most of the available simulation works on tandem solar cells are oriented to minimize optical losses and assuming simplifications for the electrical simulations in particular in the top and bottom cell interconnection at the so-called tunnel recombination junction (TRJ) neglecting the inner physics of the complete tandem device. Therefore, the effect of charge exchange mechanism between top and bottom soler cells on the external parameters of a tandem devices is not fully understood yet. In this work, we present an experimentally validated opto-electrical model based on the fundamental semiconductor equations for the study of loss mechanisms of a reference perovskite/CIGS solar cell. Different from other numerical works, because our simulation platform includes the fundamental working mechanisms of the layers comprising the TRJ, we can properly calculate the losses related to it. We firstly present the calibration and validation of our opto-electrical model with respect to three fabricated reference solar cells: top cell only, bottom cell only and tandem device. Then, we use the calibrated model to evaluate main loss mechanisms affecting the baseline tandem device. Finally, we use the model to propose a roadmap for the optimization of monolithic perovskite/CIGS tandem solar cells.

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Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiO_x:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiO_x:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiO_x:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc-SiO_x:H and hydrogenated amorphous silicon oxide (a-SiO_x:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

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This work presents a practical approach to designing an optical filter for thermal management for photovoltaic modules. The approach emphasizes the practicality of manufacturing over optical performance. Simulation work demonstrates that, for an interdigitated back contact solar cell architecture, complete rejection of infrared radiation offers limited thermal benefits requiring highly complex optical filter designs. An alternative approach consists of reducing thermalization losses by providing reflectance at lower wavelength values. An optical filter design that fulfills this requirement is possible using simple structures based on two materials and taking advantage of the harmonics present in quarter wavelength optical thickness designs. The filter is later optimized for angular performance via second-order algorithms, resulting in a device consisting of only 15 thin-film layers. Performance simulations on two locations, Delft (the Netherlands) and Singapore, estimate a temperature reduction of 2.20°C and 2.45°C, respectively. In a single year, the optical loss produced by the filter is not compensated via temperature reduction. However, improvements in the annual degradation rate show that in Singapore, the overall effect of the filter on the lifetime DC energy yield is positive.

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The fabrication process of interdigitated-back-contacted silicon heterojunction (IBC-SHJ) solar cells has been significantly simplified with the development of the so-called tunnel-IBC architecture. This architecture utilizes a highly conductive (p)-type nanocrystalline silicon (nc-Si:H) layer deposited over the full substrate area comprising pre-patterned (n)-type nc-Si:H fingers. In this context, the (p)-type nc-Si:H layer is referred to as blanket layer. As both electrodes are connected to the same blanket layer, the high lateral conductivity of (p)nc-Si:H layer can potentially lead to relatively low shunt resistance in the device, thus limiting the performance of such solar cells. To overcome such limitation, we introduce a thin (<2 nm) full-area molybdenum oxide (MoO_x) layer as an alternative to the (p)nc-Si:H blanket layer. We demonstrate that the use of such a thin MoO_x minimizes the shunting losses thanks to its low lateral conductivity while preserving the simplified fabrication process. In this process, a novel (n)-type nc-Si:H/MoO_x electron collection contact stack is implemented within the proposed solar cell architecture. We assess its transport mechanisms via electrical simulations showing that electron transport, unlike in the case of tunnel-IBC, occurs in the conduction band fully. Moreover, the proposed contact stack is evaluated in terms of contact resistivity and integrated into a proof-of-concept front/back-contacted (FBC) SHJ solar cells. Contact resistivity as low as 100 mΩcm² is achieved, and fabricated FBC-SHJ solar cells obtain a fill factor above 81.5% and open-circuit voltage above 705 mV. Lastly, the IBC-SHJ solar cells featuring the MoO_x blanket layer are fabricated, exhibiting efficiencies up to 21.14% with high shunt resistances above 150 kΩcm². Further optimizations in terms of layer properties and fabrication process are proposed to improve device performance and realize the efficiency potential of our novel IBC-SHJ solar cell architecture.

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This paper presents dynamic air-based models of a hybrid photovoltaic-thermal (PVT) collector. The models are developed with the aim of estimating the temperature of the collector components and therefore of estimating the annual generation of electrical energy and thermal energy outputs, by using actual climate data of six different cities based on Köppen-Geiger-Photovoltaic (KGPV) climate zones. The results show that the unglazed type collector has the best PV cooling while the dual channel collector has the best air heating among air-based PVT collectors. The results also indicate that the use of additional fluid enhances both electrical and thermal performance. The dynamic models are validated by comparison with results found in the literature. The paper also discusses a novel bi-fluid PVT system combined with a storage tank and an H-infinity based robust controller that can handle uncertainties. The results of the bi-fluid system show that the fraction of energy demand covered by the system is highly dependent on climate conditions and the collector's surface area. It was found that for a small-scale house (standard for four people), the proposed system can cover more than 70% annual domestic hot water demand for cities with high solar irradiance and 32% for a city with low solar irradiance.

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Transition metal oxide (TMO) thin films exhibit large bandgap and hold great potential for enhancing the performance of silicon heterojunction (SHJ) solar cells by increasing the short-circuit current density significantly. On the other hand, achieving precise control over the electrical properties of TMO layers is crucial for optimizing their function as efficient carrier-selective layer. This study demonstrates a general and feasible approach for manipulating the quality of several TMO films, aimed at enhancing their applicability in silicon heterojunction (SHJ) solar cells. The core of our method involves precise engineering of the interface between the TMO film and the underlying hydrogenated intrinsic amorphous silicon passivation layer by managing the reaction of the TMO on the surface. X-ray photoelectron spectroscopy spectra demonstrate that our methods can modify the oxygen content in TMO films, thereby adjusting their electronic properties. By applying this method, we have successfully fabricated WO_x-based SHJ solar cells with 23.30 % conversion efficiency and V₂O_x-based SHJ solar cells with 22.04 % conversion efficiency, while keeping n-type silicon-based electron-transport layer at the rear side. This research paves the way for extending such interface engineering methods to other TMO materials used as hole-transport layers in SHJ solar cells.

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Lead halide perovskites are a promising class of materials for solar cell applications. The perovskite bandgap depends on the material composition and is highly tunable. Opto-electrical device modelling is commonly used to find the optimum perovskite bandgap that maximizes device efficiency or energy yield, either in single junction or multi-junction configuration. The first step in this calculation is the optical modelling of the spectral absorptance. This requires as input the perovskite's complex refractive index N as a function of wavelength λ. The complex refractive index consists of real part n(λ) and imaginary part k(λ). For the most commonly used perovskites, n and k curves are available from spectroscopic ellipsometry measurements, but usually only for a few discrete bandgap energies. For solar cell optimization, these curves are required for a continuous range of bandgap energies. We introduce new methods for generating the n and k curves for an arbitrary bandgap, based on interpolating measured complex refractive index data. First, different dispersion models (Cody-Lorentz, Ullrich-Lorentz and Forouhi-Bloomer) are used to fit the measured data. Then, a linear regression is applied to the fit parameters with respect to the bandgap energy. From the interpolated parameters, the refractive index curve of perovskite with any desired bandgap energy is finally reconstructed. To validate our method, we compare our results with methods from literature and then use it to simulate the absorptance of a single junction perovskite and a perovskite/silicon tandem cell. This shows that our method based on the Forouhi-Bloomer model is more accurate than existing methods in predicting the complex refractive index of perovskite for arbitrary bandgaps.

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The ongoing development of photovoltaics into terawatt scale poses a number of challenges where the optics and photonics communities can contribute. An international consortium recently compiled a roadmap that elaborates on these challenges.

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Solar photovoltaic (PV) energy is variable. The output power can change considerably in a matter of minutes, imposing challenges on the control of systems connected downstream. The power from these systems can be smoothed using electric storage, potentially increasing the system cost. An alternative is to deliberately curtail the power before it starts to change. This strategy relies on ultra-short-term forecasting to determine the curtailment point. Unfortunately, forecasting is prone to errors and high uncertainty even in the very short-term, leading to control errors. We propose an active power curtailment control strategy for a stand-alone solar photovoltaic system powering an electrolyzer. Our work's novelty relies on the controller's ability to deal with large forecasting errors and high uncertainty, combining artificial intelligence for predicting the power ramps and fuzzy logic to account for imperfect prediction. We validated our approach using a hardware emulator of the photovoltaic system, power converter and electrolyzer. Under clear sky conditions, the curtailment results in unnecessary energy loss, while under variable irradiance, the controller successfully smooths the power ramps within 10% of the PV system's nominal power. Although our approach was designed for a stand-alone system, its concept can be directly applied to grid-connected systems as well.

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Clouds moving in front or away from the sun are the leading cause of irradiance variability. These variations have a repercussion on the electricity production of photovoltaic systems. Predicting such changes is essential for proper control of these systems and for maintaining grid stability. Images from the sky have proven to help with short-term solar irradiance forecasting, especially when combined with artificial intelligence. Nevertheless, these models tend to smooth the irradiance fluctuations. We propose a forecasting model to predict the clear-sky index in a forecast horizon of 20 min with a 1-minute resolution. Our model, based on a classifier to determine the sky conditions and, on an optical flow, applies an artificial intelligence model explicitly trained on each class of sky conditions. This strategy has an equivalent performance to an unclassified model and a forecast skill between 5 and 20% with respect to the smart persistence model for most classes of sky conditions while requiring considerably less training data. Although our model reduces the overall predicting error, it still has difficulties predicting irradiance changes and mainly overcast days. Our classifying strategy can be applied to other models targeting different objectives to predict sudden changes in either irradiance or power related to photovoltaic systems.

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