The degradation of perovskite solar cells due to reverse bias (RB) is one of the remaining challenges hindering the commercialization of the technology. To overcome this challenge, a thorough understanding of and control over the breakdown (BD) voltage are crucial. A prerequisite for this is that the community “speaks the same language,” that is, that the reported BD voltages are comparable. A review of literature data shows that the impact of measurement parameters is often unknown and seems to depend strongly on sample properties. It follows that standardization is the only way to reach comparability. Here, a set of measurement parameters to fill this gap is proposed. Additionally, various definitions of a “BD voltage” are used in parallel without any way of relating them to each other; this metric and its determination need to be considered as well. After a thorough discussion of the available definitions, the use of the point of maximum curvature is introduced. Its main advantage is the possible connection to an analytical description of the BD mechanism. In this way, a starting point for scientists new to the field of RB stability is provided, and the ground for a broader discussion in the community is prepared.

The integration of self-assembled monolayers (SAMs) in perovskite (PVK) solar cells often presents processing challenges that can hinder their industrial uptake. To address these limitations and enhance the manufacturability of the SAMs/PVK interface, a co-deposition strategy was recently developed, wherein both SAMs and PVK films are formed simultaneously in a single step. As the fundamental principles governing the SAM/PVK co-deposition process remain insufficiently explored, here we selected four commercially available SAMs molecules─MeO-4PACz, Me-4PACz, Me-2PACz, and 2PACz─and we mixed them based on their molecular size, polarity, and hydrophobicity, forming pairs. The co-deposition process of mixed-SAMs with MAPbI3precursor solutions was studied, and corresponding solar cell devices were fabricated. Among the three combinations tested, the MeO-4PACz + Me-4PACz one yields the most promising results, and a power conversion efficiency of approximately 19% was achieved without any additional passivation strategies. Our findings reveal that the co-deposition process of mixed-SAMs is primarily influenced by the interplay between molecular size and polarity. The binding strength of co-deposited mixed SAMs to the In2O3:Sn (ITO) substrate is largely dictated by their solvation behavior in the PVK precursor-DMF:DMSO solvent system. This conclusion is supported by quantum chemistry calculations and further corroborated by surface, structural, and compositional analysis.

Sequential thermal evaporation is an emerging technique for obtaining perovskite (PVK) photoactive materials for solar cell applications. Advantages include solvent-free processing, accurate stoichiometry control, and scalable processing. Nevertheless, the power conversion efficiency (PCE) of PVK solar cells (PSCs) fabricated by evaporation still lags behind that of solution-processed PSCs. Here, based on multi-cycle sequential thermal evaporation, we systematically investigate the effects of the post-deposition annealing temperature on the PVK properties in terms of surface morphology, opto-electronic properties, and device performance. We find that the average grain size increases to almost 1 μm and charge carrier mobilities exceed 50 cm2 V−1 s−1 when the annealing temperature is increased to 170 °C. We introduce a trace of PbCl2 to the multi-cycle sequential deposition to improve the absorber crystallinity at a lower annealing temperature of 150 °C, as evidenced by the XRD and PL analyses. The resulting PSC in a p–i–n structure yields a PCE of 18.5% with a cell area of 0.09 cm2. With the same deposition parameters, the cell area is scaled up to 0.36 cm2, achieving champion PCEs of 17.06%. This indicates the great potential of this technology for the commercialization of PSCs in the future.

Interdigitated-back-contacted silicon heterojunction (IBC-SHJ) solar cells with molybdenum oxide (MoOx) as a hole transport layer and a novel (n)-type hydrogenated nanocrystalline silicon (nc-Si:H)/MoOx electron transport stack use ultra-thin MoOx as a full-area blanket layer. This solar cell architecture is realized with a simplified fabrication process and ensures high shunt resistances, attributed to the low lateral conductivity of the MoOx layer. Here we investigate the electron transport mechanisms through the electron collection contact to improve the understanding and performance of the IBC-SHJ solar cells. For this evaluation, we first introduce plasma treatments between (n)nc-Si:H and MoOx and assess their role in passivation, charge carrier transport and MoOx growth. Temperature-dependent current–voltage (I–V) measurements of front/back-contacted (FBC) solar cells with (n)nc-Si:H/MoOx stack, supported by high-resolution transmission electron microscopy (HR-TEM) and energy dispersive X-ray spectroscopy (EDX) imaging and numerical simulations, reveal that plasma treatment (PT) and plasma treatment with boron (PTB) enable electron transport based on direct energy transitions. Next, we perform thickness sensitivity analysis to find the optimal layer thicknesses of (n)nc-Si:H and MoOx. While FBC-SHJ devices exhibit stable performance across a broad range of (n)nc-Si:H thicknesses (10–50 nm), IBC-SHJ devices are more sensitive to such a thickness variation, with thinner (n)-layers limiting final device efficiency. The combination of 50-nm thick (n)nc-Si:H, PTB, and 1.7-nm thick MoOx enables the best performance of IBC-SHJ solar cells. When metallized with electroplated Cu, our champion IBC-SHJ solar cell with MoOx blanket layer reaches an efficiency of 23.59%. Further advancements in (n)nc-Si:H properties, passivation, transparent conductive oxide selection, and front-side light management are expected to drive efficiencies well above 24%.

In realistic partial shading scenarios, the impact of low-intensity illumination needs to be considered. However, there is barely any research available and the published results are contradictory. Here, it is shown that the reverse bias behavior of perovskite solar cells under low-intensity illumination strongly depends on the voltage scan rate. As explanation, a hypothesis is developed and experimentally verified that is based on two antagonistic mechanisms: on one hand, illumination affects the mobile ions conductivity, decreasing the breakdown voltage. On the other hand, an electrochemical reaction caused by the reverse bias current increases the breakdown voltage. Since the two mechanisms occur on slightly different time scales, it depends on the voltage scan rate which mechanism dominates. These findings emphasize that more detailed research into the mechanism occurring in reverse bias and the factors affecting the reverse bias breakdown is still necessary. Firstly, a deeper understanding would be helpful for investigating the effect of realistic, non-ideal partial shading scenarios on perovskite modules. Secondly, knowing how cell properties and external factors influence the breakdown voltage is necessary for defining standardized measurement procedures that allow the comparison of different perovskite solar cells in regards to their reverse bias stability.

Polycrystalline silicon (poly-Si) carrier-selective passivating contacts (CSPCs), featuring high photoconversion efficiency (PCE) and cost-effectiveness, have emerged as a promising approach for high-efficiency crystalline silicon (c-Si) solar cells. To minimize parasitic absorption losses induced by doped poly-Si window layers, wide bandgap oxygen-alloyed poly-Si (poly-SiO_x) layers are developed. However, challenges persist in achieving excellent surface passivation for boron-doped poly-SiO_x contact stacks, likely caused by boron diffusion during annealing and the reduced doping concentration resulting from lower crystallinity as oxygen content increases. In this study, we investigate the impact on the passivating contact structure and solar cell performance of a 10-nm thick intrinsic hydrogenated amorphous silicon buffer layer with varying oxygen content (a-Si (O_x):H) deposited by plasma-enhanced chemical vapor deposition (PECVD), and placed between the tunneling silicon oxide (SiO_x) and the poly-SiO_x (p⁺). After the hydrogenation step, we obtain both high passivation quality with implied open circuit voltage (iV_oc) of 728.3 mV and low contact resistivity (ρ_c) of 59.18 mΩ cm² on polished surface for oxygen-free a-Si:H buffer layer. These improvements can be attributed to the appropriate thickness of the tunnel oxide and confirmed by transmission electron microscopy (TEM) images, to higher crystallinity of the buffer layer, which facilitates more efficient doping in the buffer layer. This is evidenced by energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS) results. At the device level, a front-side textured, rear-side flat, rear junction poly-SiO_x/poly-SiO_x solar cell on n-type c-Si wafer, an efficiency improvement can be observed from 3.55 % without a PECVD buffer layer to 18.9 % with an oxygen-free a-Si:H PECVD buffer layer. The impact of the buffer layer crystallinity on cell performance is further demonstrated by deploying a 10-nm thick LPCVD buffer layer, which facilitates an efficiency of 21.15 % for the same device structure.

Throughout the development of silicon heterojunction (SHJ) solar cells, the transparent conductive oxide has been regarded as an essential component of their front electrode, facilitating lateral charge transport of photogenerated carriers toward the front metal grid fingers. In rear junction (RJ)-SHJ solar cells, the (n)c-Si bulk is known to support the lateral electron transport at maximum power point injection level, provided that the contact resistance of the front contact stack is sufficiently low. This enables experimental RJ-SHJ solar cell architectures featuring a localized front carrier-selective passivating contact exclusively covering the area contacted by the metal grid. Herein, a top-down approach to the synthesis of this type of architecture is studied and its optical and electrical performance applied to different (n)-type contacts are investigated. Additionally, the potential of the localized contact architecture through Cu-plated RJ-SHJ solar cells is demonstrated. These solar cell demonstrators feature high short-circuit current density of 40.5 mA cm−2, without significantly compromising their open-circuit voltage or fill factor, enabling efficiencies well above 23%, a 2%abs improvement compared to their state before localization of the front contact.

The fabrication process of interdigitated-back-contacted silicon heterojunction (IBC-SHJ) solar cells has been significantly simplified with the development of the so-called tunnel-IBC architecture. This architecture utilizes a highly conductive (p)-type nanocrystalline silicon (nc-Si:H) layer deposited over the full substrate area comprising pre-patterned (n)-type nc-Si:H fingers. In this context, the (p)-type nc-Si:H layer is referred to as blanket layer. As both electrodes are connected to the same blanket layer, the high lateral conductivity of (p)nc-Si:H layer can potentially lead to relatively low shunt resistance in the device, thus limiting the performance of such solar cells. To overcome such limitation, we introduce a thin (<2 nm) full-area molybdenum oxide (MoO_x) layer as an alternative to the (p)nc-Si:H blanket layer. We demonstrate that the use of such a thin MoO_x minimizes the shunting losses thanks to its low lateral conductivity while preserving the simplified fabrication process. In this process, a novel (n)-type nc-Si:H/MoO_x electron collection contact stack is implemented within the proposed solar cell architecture. We assess its transport mechanisms via electrical simulations showing that electron transport, unlike in the case of tunnel-IBC, occurs in the conduction band fully. Moreover, the proposed contact stack is evaluated in terms of contact resistivity and integrated into a proof-of-concept front/back-contacted (FBC) SHJ solar cells. Contact resistivity as low as 100 mΩcm² is achieved, and fabricated FBC-SHJ solar cells obtain a fill factor above 81.5% and open-circuit voltage above 705 mV. Lastly, the IBC-SHJ solar cells featuring the MoO_x blanket layer are fabricated, exhibiting efficiencies up to 21.14% with high shunt resistances above 150 kΩcm². Further optimizations in terms of layer properties and fabrication process are proposed to improve device performance and realize the efficiency potential of our novel IBC-SHJ solar cell architecture.

Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiO_x:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiO_x:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiO_x:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc-SiO_x:H and hydrogenated amorphous silicon oxide (a-SiO_x:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

Reducing indium consumption in transparent conductive oxide (TCO) layers is crucial for mass production of silicon heterojunction (SHJ) solar cells. In this contribution, optical simulation-assisted design and optimization of SHJ solar cells featuring MoO_x hole collectors with ultra-thin TCO layers is performed. Firstly, bifacial SHJ solar cells with MoO_x as the hole transport layer (HTL) and three types of n-contact as electron transport layer (ETL) are fabricated with 50 nm thick ITO on both sides. It is found that bilayer (nc-Si:H/a-Si:H) and trilayer (nc-SiO_x:H/nc-Si:H/a-Si:H) as n-contacts performed electronically and optically better than monolayer (a-Si:H) in bifacial SHJ cells, respectively. Then, as suggested by optical simulations, the same stack of tungsten-doped indium oxide (IWO) and optimized MgF₂ layers are applied on both sides of front/back-contacted SHJ solar cells. Devices endowed with 10 nm thick IWO and bilayer n-contact exhibit a certified efficiency of 21.66% and 20.66% when measured from MoO_x and n-contact side, respectively. Specifically, when illuminating from the MoO_x side, the short-circuit current density and the fill factor remain well above 40 mA cm⁻² and 77%, respectively. Compared to standard front/rear TCO thicknesses (75 nm/150 nm) deployed in monofacial SHJ solar cells, this represents over 90% TCO reduction. As for bifacial cells featuring 50 nm thick IWO layers, a champion device with a bilayer n-contact as ETL is obtained, which exhibits certified conversion efficiency of 23.25% and 22.75% when characterized from the MoO_x side and the n-layer side, respectively, with a bifaciality factor of 0.98. In general, by utilizing a n-type bilayer stack, bifaciality factor is above 0.96 and it can be further enhanced up to 0.99 by switching to a n-type trilayer stack. Again, compared to the aforementioned standard front/rear TCO thicknesses, this translates to a TCO reduction of more than 67%.

Two terminal (2T) perovskite/copper-indium-gallium-selenide (CIGS) tandem solar cells combine high conversion efficiency with lightweight flexible substrates which can decrease manufacturing and installation costs. In order to improve the power conversion efficiency of these tandem solar cells, the use of advanced simulation tools is crucial to estimate the loss mechanisms. In this regard, most of the available simulation works on tandem solar cells are oriented to minimize optical losses and assuming simplifications for the electrical simulations in particular in the top and bottom cell interconnection at the so-called tunnel recombination junction (TRJ) neglecting the inner physics of the complete tandem device. Therefore, the effect of charge exchange mechanism between top and bottom soler cells on the external parameters of a tandem devices is not fully understood yet. In this work, we present an experimentally validated opto-electrical model based on the fundamental semiconductor equations for the study of loss mechanisms of a reference perovskite/CIGS solar cell. Different from other numerical works, because our simulation platform includes the fundamental working mechanisms of the layers comprising the TRJ, we can properly calculate the losses related to it. We firstly present the calibration and validation of our opto-electrical model with respect to three fabricated reference solar cells: top cell only, bottom cell only and tandem device. Then, we use the calibrated model to evaluate main loss mechanisms affecting the baseline tandem device. Finally, we use the model to propose a roadmap for the optimization of monolithic perovskite/CIGS tandem solar cells.

Transition metal oxide (TMO) thin films exhibit large bandgap and hold great potential for enhancing the performance of silicon heterojunction (SHJ) solar cells by increasing the short-circuit current density significantly. On the other hand, achieving precise control over the electrical properties of TMO layers is crucial for optimizing their function as efficient carrier-selective layer. This study demonstrates a general and feasible approach for manipulating the quality of several TMO films, aimed at enhancing their applicability in silicon heterojunction (SHJ) solar cells. The core of our method involves precise engineering of the interface between the TMO film and the underlying hydrogenated intrinsic amorphous silicon passivation layer by managing the reaction of the TMO on the surface. X-ray photoelectron spectroscopy spectra demonstrate that our methods can modify the oxygen content in TMO films, thereby adjusting their electronic properties. By applying this method, we have successfully fabricated WO_x-based SHJ solar cells with 23.30 % conversion efficiency and V₂O_x-based SHJ solar cells with 22.04 % conversion efficiency, while keeping n-type silicon-based electron-transport layer at the rear side. This research paves the way for extending such interface engineering methods to other TMO materials used as hole-transport layers in SHJ solar cells.

Passivating contacts are crucial for realizing high-performance crystalline silicon solar cells. Herein, contact formation by plasma-enhanced chemical vapor deposition (PECVD) followed by an annealing step is focused on. Poly-SiO_x passivating contacts by combining plasma-assisted N₂O-based oxidation of silicon (PANO-SiO_x) with a thin film of phosphorus (n⁺) or boron (p⁺)-doped hydrogenated amorphous silicon oxide (a-SiO_x:H) are manufactured. Postannealing is conducted for transitioning a-SiO_x:H into poly-SiO_x. The aim is to achieve a contact with low absorption and high-quality passivation. It is demonstrated that by tuning the plasma oxidation process time and power, the PANO-SiO_x thickness and its passivation quality can be controlled. A higher SiO₂ content is observed in PANO-SiO_x than in the nitric acid oxidation of silicon (NAOS-SiO_x) counterpart. PANO-SiO_x acts as a stronger diffusion barrier for both boron and phosphorus atoms compared to NAOS-SiO_x, affecting the dopant distribution during annealing. Implied open-circuit voltages up to 751 and 710 mV for n⁺ and p⁺ flat symmetric samples, respectively, are demonstrated. With respect to standard thermally grown SiO₂ tunneling oxide combined with (in/ex)situ-doped low-pressure chemical vapor deposition poly-Si, this study presents a simple alternative for manufacturing passivating contact fully based on PECVD processes.

Silicon heterojunction (SHJ) solar cells have achieved a record efficiency of 26.81% in a front/back-contacted (FBC) configuration. Moreover, thanks to their advantageous high V_OC and good infrared response, SHJ solar cells can be further combined with wide bandgap perovskite cells forming tandem devices to enable efficiencies well above 33%. In this study, we present strategies to realize high-efficiency SHJ solar cells through combined theoretical and experimental studies, starting from the optimization of Si-based thin-film layers to the implementation of electrodes with reduced indium and silver usage. Advanced opto-electrical simulations, which enable comprehensive theoretical understandings of the main physical mechanisms governing carriers’ collection and light management, provide clear pathways for device designs and experimental optimizations. We present the fabricated FBC-SHJ solar cells in both monofacial and bifacial configurations with the best efficiencies of 24.18% and 23.25%, respectively. We point out that to achieve optimum device performance, the compositional materials should be holistically optimized and evaluated as part of the contact stacks with adjacent layers. As an outlook beyond the classical FBC-SHJ solar cell architecture, we propose various novel SHJ-based solar cell architectures. Their potential performance was assessed and compared via rigorous opto-electrical simulations and a maximal efficiency of 27.60% was simulated for FBC-SHJ solar cells featuring localized contacts.

Monolithic perovskite/c-Si tandem solar cells have attracted enormous research attention and have achieved efficiencies above 30%. This work describes the development of monolithic tandem solar cells based on silicon heterojunction (SHJ) bottom- and perovskite top-cells and highlights light management techniques assisted by optical simulation. We first engineered (i)a-Si:H passivating layers for (100)-oriented flat c-Si surfaces and combined them with various (n)a-Si:H, (n)nc-Si:H, and (n)nc-SiOx:H interfacial layers for SHJ bottom-cells. In a symmetrical configuration, a long minority carrier lifetime of 16.9 ms was achieved when combining (i)a-Si:H bilayers with (n)nc-Si:H (extracted at the minority carrier density of 1015 cm-3). The perovskite sub-cell uses a photostable mixed-halide composition and surface passivation strategies to minimize energetic losses at charge-transport interfaces. This allows tandem efficiencies above 23% (a maximum of 24.6%) to be achieved using all three types of (n)-layers. Observations from experimentally prepared devices and optical simulations indicate that both (n)nc-SiOx:H and (n)nc-Si:H are promising for use in high-efficiency tandem solar cells. This is possible due to minimized reflection at the interfaces between the perovskite and SHJ sub-cells by optimized interference effects, demonstrating the applicability of such light management techniques to various tandem structures.

Nonequal current generation in the cells of a photovoltaic module, e.g., due to partial shading, leads to operation in reverse bias. This quickly causes a significant efficiency loss in perovskite solar cells. We report a more quantitative investigation of the reverse bias degradation. Various small reverse biases (negative voltages) were applied for different durations. After normalizing the applied voltages with the breakdown voltages, we found similar dependences of the reverse bias current and the degradation rate. We draw conclusions regarding possible degradation mechanisms and propose a way to increase the comparability of degradation rates for comparing different perovskite solar cells.

Multiple-source thermal evaporation is emerging as an excellent technique to obtain perovskite (PVK) materials for solar cell applications due to its solvent-free processing, accurate control of stoichiometric ratio, and potential for scalability. Nevertheless, the currently reported layer-by-layer deposition approach is afflicted by long processing times caused by the multiple repetitions of thin films, which hinder industrial uptake. On the other hand, the coevaporation entails higher complexity due to the challenges of controlling the sublimation of multiple sources simultaneously. In this work, we propose a simplified approach consisting of a single-cycle deposition (SCD) of three thick precursor layers to obtain high-quality Cs0.15FA0.85PbI2.85Br0.15 (CsFAPbIBr) films. After annealing, the optimized PVK film exhibits comparable properties to the one deposited by multicycle deposition in terms of crystal structure, in-depth uniformity, and optoelectrical properties. Also, the formation and evolution of SCD PVK during annealing are investigated. We found that, in the competitive processes of precursor diffusion and reaction, the presence of cesium bromide can assist precursor mixing driven by the annealing treatment, demonstrating a reaction-limited process in the PVK conversion. With this simplified SCD approach, a PVK film is obtained with expected optical and opto-electronic properties, providing an appealing way for future thermally evaporated PVK device preparation.

Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to their excellent surface passivation quality and carrier selectivity. The eventual existence of pinholes within the ultra-thin SiOx layer is one of the key factors for carrier collection, beside the tunneling mechanism. However, pinholes are usually believed to have negative impact on the passivation quality of poly-Si passivating contacts. This work studied the influence of the pinhole density on the passivation quality of ion-implanted poly-Si passivating contacts by decoupling the pinhole generation from the dopants diffusion process by means of two annealing steps: (1) a pre-annealing step at high temperature after the intrinsic poly-Si deposition to visualize the formation of pinholes and (2) a post-annealing step for dopants activation/diffusion after ion-implantation. The pinhole density is quantified in the range of 1✕106 to 3✕108 cm2 by the TMAH selective etching approach. The passivation quality is discussed with respect to the pinhole density and the post-annealing thermal budget (TB) for dopants diffusion. The study shows that a moderate pinhole density does not induce doping profile variations that can be detectable by the coarse spatial resolution of ECV measurements. It is surprising that the existence of pinholes in a moderate density within our thickness fixed SiOx layer can effectively enhance the passivation qualities for both n+ and p+ poly-Si passivating contacts. We speculate the reason is due to the enhanced field-effect passivation at the pinhole surrounding. In fact, the variation of the passivation quality depends on the balance between a strengthened field-effect passivation and an excessive local Auger recombination, being both effects induced by the higher and deeper level of dopants diffused into the c-Si surface through the pinholes.

The preferential orientation of the perovskite (PVK) is typically accomplished by manipulation of the mixed cation/halide composition of the solution used for wet processing. However, for PVKs grown by thermal evaporation, this has been rarely addressed. It is unclear how variation in crystal orientation affects the optoelectronic properties of thermally evaporated films, including the charge carrier mobility, lifetime, and trap densities. In this study, we use different intermediate annealing temperatures Tinter between two sequential evaporation cycles to control the Cs0.15FA0.85PbI2.85Br0.15 orientation of the final PVK layer. XRD and 2D-XRD measurements reveal that when using no intermediate annealing primarily the (110) orientation is obtained, while when using Tinter = 100 °C a nearly isotropic orientation is found. Most interestingly for Tinter > 130 °C a highly oriented PVK (100) is formed. We found that although bulk electronic properties like photoconductivity are independent of the preferential orientation, surface related properties differ substantially. The highly oriented PVK (100) exhibits improved photoluminescence in terms of yield and lifetime. In addition, high spatial resolution mappings of the contact potential difference (CPD) as measured by KPFM for the highly oriented PVK show a more homogeneous surface potential distribution than those of the nonoriented PVK. These observations suggest that a highly oriented growth of thermally evaporated PVK is preferred to improve the charge extraction at the device level.

Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit whereas perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiO_x (poly-SiO_x) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high temperature poly-SiO_x CSPCs and demonstrate novel high efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiO_x. Then we optimized the passivation properties of p-type and n-type doped poly-SiO_x CSPCs. Here, we have optimized the p-type doped poly-SiO_x CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively.