A Review
Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices
Depeng Qiu (Carbon Neutrality Research Center of Jiangxi Province, Jiangxi Academy of Sciences, Forschungszentrum Jülich, Key Laboratory of Greenhouse Gas Accounting and Carbon Reduction of Jiangxi Province)
Andreas Lambertz (Forschungszentrum Jülich)
Weiyuan Duan (Forschungszentrum Jülich)
L. Mazzarella (TU Delft - Photovoltaic Materials and Devices)
Philipp Wagner (Institute for Solar Fuels)
Anna Belen Morales-Vilches (Institute for Solar Fuels)
Guangtao Yang (Trina Solar Co., Ltd., TU Delft - Photovoltaic Materials and Devices)
P. Procel Moya (TU Delft - Photovoltaic Materials and Devices)
O Isabella (TU Delft - Photovoltaic Materials and Devices)
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Abstract
Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiOx:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiOx:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc-SiOx:H and hydrogenated amorphous silicon oxide (a-SiOx:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.
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