Optimizing the deposition parameters in the fabrication of passivating contacts for crystalline silicon solar cells is critical for improving efficiency. This study explored the influence of varying RF power of Plasma-Enhanced Chemical Vapor Deposition (PECVD) on the quality of hydrogenated intrinsic amorphous silicon ( a-Si:H) films. The aim is to manufacture in-situ phosphorous-doped poly-Si/SiO_x/c-Si passivating contacts with a-Si:H as buffer layer between the tunnelling oxide and the n-type poly-Si. The microstructure factor of our intrinsic layers increases from 0.176 to 0.804, that is from higher to lower film density, as the RF power increases from 5 W to 55 W. Analysis using X-ray Photoelectron Spectroscopy and Optical Microscopy indicates that the Si content in SiO_x is correlated with the formation of pinholes. Our detailed analysis showed that varying the RF power when depositing a-Si:H contacting layer is crucial in altering both the Si⁴⁺ content in SiO_x and the pinhole density, due to the interplay between the plasma etching and the buffering effects during of the a-Si:H layer growth. Notably, the sample processed with 25 W exhibited the maximum pinhole density, the lowest Si⁴⁺ content in SiO_x and the deepest phosphorus in-diffusion, potentially yielding superior results in passivation quality and contact resistivity under optimized PECVD conditions.

Polycrystalline silicon (poly-Si) carrier-selective passivating contacts (CSPCs), featuring high photoconversion efficiency (PCE) and cost-effectiveness, have emerged as a promising approach for high-efficiency crystalline silicon (c-Si) solar cells. To minimize parasitic absorption losses induced by doped poly-Si window layers, wide bandgap oxygen-alloyed poly-Si (poly-SiO_x) layers are developed. However, challenges persist in achieving excellent surface passivation for boron-doped poly-SiO_x contact stacks, likely caused by boron diffusion during annealing and the reduced doping concentration resulting from lower crystallinity as oxygen content increases. In this study, we investigate the impact on the passivating contact structure and solar cell performance of a 10-nm thick intrinsic hydrogenated amorphous silicon buffer layer with varying oxygen content (a-Si (O_x):H) deposited by plasma-enhanced chemical vapor deposition (PECVD), and placed between the tunneling silicon oxide (SiO_x) and the poly-SiO_x (p⁺). After the hydrogenation step, we obtain both high passivation quality with implied open circuit voltage (iV_oc) of 728.3 mV and low contact resistivity (ρ_c) of 59.18 mΩ cm² on polished surface for oxygen-free a-Si:H buffer layer. These improvements can be attributed to the appropriate thickness of the tunnel oxide and confirmed by transmission electron microscopy (TEM) images, to higher crystallinity of the buffer layer, which facilitates more efficient doping in the buffer layer. This is evidenced by energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS) results. At the device level, a front-side textured, rear-side flat, rear junction poly-SiO_x/poly-SiO_x solar cell on n-type c-Si wafer, an efficiency improvement can be observed from 3.55 % without a PECVD buffer layer to 18.9 % with an oxygen-free a-Si:H PECVD buffer layer. The impact of the buffer layer crystallinity on cell performance is further demonstrated by deploying a 10-nm thick LPCVD buffer layer, which facilitates an efficiency of 21.15 % for the same device structure.

Throughout the development of silicon heterojunction (SHJ) solar cells, the transparent conductive oxide has been regarded as an essential component of their front electrode, facilitating lateral charge transport of photogenerated carriers toward the front metal grid fingers. In rear junction (RJ)-SHJ solar cells, the (n)c-Si bulk is known to support the lateral electron transport at maximum power point injection level, provided that the contact resistance of the front contact stack is sufficiently low. This enables experimental RJ-SHJ solar cell architectures featuring a localized front carrier-selective passivating contact exclusively covering the area contacted by the metal grid. Herein, a top-down approach to the synthesis of this type of architecture is studied and its optical and electrical performance applied to different (n)-type contacts are investigated. Additionally, the potential of the localized contact architecture through Cu-plated RJ-SHJ solar cells is demonstrated. These solar cell demonstrators feature high short-circuit current density of 40.5 mA cm−2, without significantly compromising their open-circuit voltage or fill factor, enabling efficiencies well above 23%, a 2%abs improvement compared to their state before localization of the front contact.

In this work, we optimize cerium-doped indium oxide – ICO – thin films with respect to sputtering parameters such as oxygen flow, deposition pressure, applied RF power. Optimized 35-nm-thick ICO layer demonstrated a mobility of 44.22 cm²/Vs, a carrier concentration of 1.65 × 10²⁰/cm³, and a resistivity of 8.56 × 10⁻⁴ Ω cm. Application of such layers into front/back contact silicon heterojunction (FBC-SHJ) solar cells enhanced the short-circuit current density (J_SC) by 0.67 when compared to SHJ cell endowed with tin-doped indium oxide (ITO), respectively. This enhancement yielded an absolute power conversion efficiency (PCE) improvement of 0.55 %, reaching efficiencies of around 23.6 % for devices with ICO layers.

Crystalline silicon (c-Si) solar cells are rapidly establishing new efficiency frontiers, with front/back-contacted (FBC) designs now exceeding 26.8 % power conversion efficiency (PCE) and interdigitated back-contacted (IBC) cells surger limitepassing 27 %. This progress is driving a shift from traditional FBC PERC architectures to high-performance TOPCon, SHJ, and IBC configurations, with carrier-selective contacts (CSCs) at the core of these breakthroughs. In this work, we identify three critical factors underpinning CSC effectiveness: the work function of contact layers, energy barriers at heterointerfaces, and energy alignment across the stack of layers forming the CSC. By using advanced numerical simulations, we establish a framework for evaluating and optimizing CSC designs, including state-of-the-art poly-Si, SHJ, and dopant-free structures. We also introduce novel architectures based on TCO materials with potentially simpler manufacturing processes. Our simulations reveal that advanced FBC structures, can reach PCEs up to 28 % deploying localized CSCs architecture. In optimized IBC configurations, efficiencies as high as 28.64 % are achievable. For both, FBC and IBC configurations patterning limitations remain a barrier to theoretical efficiency peaks. Future advances in precision patterning could further close this gap, pushing c-Si solar cells closer to their intrinsic limits. This study provides a roadmap for high-efficiency CSC integration in next-generation c-Si solar cells, establishing pathways to achieve performance over 28 % and accelerating the evolution of photovoltaic technology.

The impedance of solar cells can be leveraged for a variety of innovative applications. However, for the continued advancement of such applications, it is crucial to understand how the impedance varies during practical operation. This work characterizes the impedance of modern crystalline silicon solar cells across different bias voltages and under varying illumination and temperature conditions. It is found that for a given bias voltage, variations in temperature have a notably stronger impact on PN junction impedance than changes in irradiance. However, during maximum power point (MPP) tracking, variations in irradiance have a larger influence on the PN junction impedance than temperature variations. This is related to the shifting operating voltage during operation. Furthermore, it is shown that the capacitance during practical operation can strongly vary for different solar cells. For instance, the areal MPP capacitance values of the two cells tested in this study at 0.1 sun irradiance and a temperature of 30 °C were 0.283 μF/cm2 and 20.2 μF/cm2, a 71-fold difference. Conversely, the range of the MPP diffusion resistance was found to be highly similar for different cells. The results of this study enhance the understanding of solar-cell impedance and have a broad applicability.

A thorough understanding of the small-signal response of solar cells can reveal intrinsic device characteristics and pave the way for innovations. This study investigates the impedance of crystalline silicon PN junction devices using TCAD simulations, focusing on the impact of frequency, bias voltage, and the presence of a low–high (LH) junction. It is shown that the PN junction exhibits the behavior of a parallel resistor–capacitor circuit (RC-loop) with fixed element values at low frequencies, but undergoes relaxation in both resistance R_j and capacitance C_j as frequency increases. Moreover, it is revealed that the addition of a LH junction impacts the impedance by altering R_j, C_j, and the series resistance R_s. Finally, while various publications on solar-cell impedance model the LH junction using an RC-loop, the findings in this study indicate that such a model does not accurately represent the underlying physics. Instead, this approach is likely compensating for the frequency-dependent behavior of R_j and C_j.

Transition metal oxide (TMO) thin films exhibit large bandgap and hold great potential for enhancing the performance of silicon heterojunction (SHJ) solar cells by increasing the short-circuit current density significantly. On the other hand, achieving precise control over the electrical properties of TMO layers is crucial for optimizing their function as efficient carrier-selective layer. This study demonstrates a general and feasible approach for manipulating the quality of several TMO films, aimed at enhancing their applicability in silicon heterojunction (SHJ) solar cells. The core of our method involves precise engineering of the interface between the TMO film and the underlying hydrogenated intrinsic amorphous silicon passivation layer by managing the reaction of the TMO on the surface. X-ray photoelectron spectroscopy spectra demonstrate that our methods can modify the oxygen content in TMO films, thereby adjusting their electronic properties. By applying this method, we have successfully fabricated WO_x-based SHJ solar cells with 23.30 % conversion efficiency and V₂O_x-based SHJ solar cells with 22.04 % conversion efficiency, while keeping n-type silicon-based electron-transport layer at the rear side. This research paves the way for extending such interface engineering methods to other TMO materials used as hole-transport layers in SHJ solar cells.

The application of molybdenum oxide (MoOx) as a hole-selective contact for silicon-based solar cells has been explored due to superior optical transmittance and potentially leaner manufacturing compared to fully amorphous silicon-based heterojunction (SHJ) devices. However, the development of MoOx contacts has been hampered by their poor thermal stability, resulting in a carrier selectivity loss and an S-shaped IV curve. The aim of this study is to understand the influence of different passivating interlayers on the carrier selectivity of hole-selective MoOx contacts for crystalline silicon (c-Si) solar cells. We highlight the effect of different interlayers on the surface passivation quality, contact selectivity, and the thermal stability of our MoOx-contacted devices. The interlayers studied are intrinsic hydrogenated amorphous silicon (a-Si:H(i)), thermally grown ultrathin SiO2, and a stack consisting of an ultrathin SiOy and Al2O3 layer. Additionally, we simulate the interacting interlayer properties on the carrier selectivity of our MoOx contacts using a simplified model. Among these interlayers, the Al2O3/SiOy stack shows to be a promising alternative to SiO2 by enabling efficient transport of holes while being able to sustain an annealing temperature of at least 250 °C underlining its potential in module manufacturing and outdoor operation.

Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiO_x:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiO_x:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiO_x:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc-SiO_x:H and hydrogenated amorphous silicon oxide (a-SiO_x:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

Reducing indium consumption in transparent conductive oxide (TCO) layers is crucial for mass production of silicon heterojunction (SHJ) solar cells. In this contribution, optical simulation-assisted design and optimization of SHJ solar cells featuring MoO_x hole collectors with ultra-thin TCO layers is performed. Firstly, bifacial SHJ solar cells with MoO_x as the hole transport layer (HTL) and three types of n-contact as electron transport layer (ETL) are fabricated with 50 nm thick ITO on both sides. It is found that bilayer (nc-Si:H/a-Si:H) and trilayer (nc-SiO_x:H/nc-Si:H/a-Si:H) as n-contacts performed electronically and optically better than monolayer (a-Si:H) in bifacial SHJ cells, respectively. Then, as suggested by optical simulations, the same stack of tungsten-doped indium oxide (IWO) and optimized MgF₂ layers are applied on both sides of front/back-contacted SHJ solar cells. Devices endowed with 10 nm thick IWO and bilayer n-contact exhibit a certified efficiency of 21.66% and 20.66% when measured from MoO_x and n-contact side, respectively. Specifically, when illuminating from the MoO_x side, the short-circuit current density and the fill factor remain well above 40 mA cm⁻² and 77%, respectively. Compared to standard front/rear TCO thicknesses (75 nm/150 nm) deployed in monofacial SHJ solar cells, this represents over 90% TCO reduction. As for bifacial cells featuring 50 nm thick IWO layers, a champion device with a bilayer n-contact as ETL is obtained, which exhibits certified conversion efficiency of 23.25% and 22.75% when characterized from the MoO_x side and the n-layer side, respectively, with a bifaciality factor of 0.98. In general, by utilizing a n-type bilayer stack, bifaciality factor is above 0.96 and it can be further enhanced up to 0.99 by switching to a n-type trilayer stack. Again, compared to the aforementioned standard front/rear TCO thicknesses, this translates to a TCO reduction of more than 67%.

The fabrication process of interdigitated-back-contacted silicon heterojunction (IBC-SHJ) solar cells has been significantly simplified with the development of the so-called tunnel-IBC architecture. This architecture utilizes a highly conductive (p)-type nanocrystalline silicon (nc-Si:H) layer deposited over the full substrate area comprising pre-patterned (n)-type nc-Si:H fingers. In this context, the (p)-type nc-Si:H layer is referred to as blanket layer. As both electrodes are connected to the same blanket layer, the high lateral conductivity of (p)nc-Si:H layer can potentially lead to relatively low shunt resistance in the device, thus limiting the performance of such solar cells. To overcome such limitation, we introduce a thin (<2 nm) full-area molybdenum oxide (MoO_x) layer as an alternative to the (p)nc-Si:H blanket layer. We demonstrate that the use of such a thin MoO_x minimizes the shunting losses thanks to its low lateral conductivity while preserving the simplified fabrication process. In this process, a novel (n)-type nc-Si:H/MoO_x electron collection contact stack is implemented within the proposed solar cell architecture. We assess its transport mechanisms via electrical simulations showing that electron transport, unlike in the case of tunnel-IBC, occurs in the conduction band fully. Moreover, the proposed contact stack is evaluated in terms of contact resistivity and integrated into a proof-of-concept front/back-contacted (FBC) SHJ solar cells. Contact resistivity as low as 100 mΩcm² is achieved, and fabricated FBC-SHJ solar cells obtain a fill factor above 81.5% and open-circuit voltage above 705 mV. Lastly, the IBC-SHJ solar cells featuring the MoO_x blanket layer are fabricated, exhibiting efficiencies up to 21.14% with high shunt resistances above 150 kΩcm². Further optimizations in terms of layer properties and fabrication process are proposed to improve device performance and realize the efficiency potential of our novel IBC-SHJ solar cell architecture.

Two terminal (2T) perovskite/copper-indium-gallium-selenide (CIGS) tandem solar cells combine high conversion efficiency with lightweight flexible substrates which can decrease manufacturing and installation costs. In order to improve the power conversion efficiency of these tandem solar cells, the use of advanced simulation tools is crucial to estimate the loss mechanisms. In this regard, most of the available simulation works on tandem solar cells are oriented to minimize optical losses and assuming simplifications for the electrical simulations in particular in the top and bottom cell interconnection at the so-called tunnel recombination junction (TRJ) neglecting the inner physics of the complete tandem device. Therefore, the effect of charge exchange mechanism between top and bottom soler cells on the external parameters of a tandem devices is not fully understood yet. In this work, we present an experimentally validated opto-electrical model based on the fundamental semiconductor equations for the study of loss mechanisms of a reference perovskite/CIGS solar cell. Different from other numerical works, because our simulation platform includes the fundamental working mechanisms of the layers comprising the TRJ, we can properly calculate the losses related to it. We firstly present the calibration and validation of our opto-electrical model with respect to three fabricated reference solar cells: top cell only, bottom cell only and tandem device. Then, we use the calibrated model to evaluate main loss mechanisms affecting the baseline tandem device. Finally, we use the model to propose a roadmap for the optimization of monolithic perovskite/CIGS tandem solar cells.

Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to their excellent surface passivation quality and carrier selectivity. The eventual existence of pinholes within the ultra-thin SiOx layer is one of the key factors for carrier collection, beside the tunneling mechanism. However, pinholes are usually believed to have negative impact on the passivation quality of poly-Si passivating contacts. This work studied the influence of the pinhole density on the passivation quality of ion-implanted poly-Si passivating contacts by decoupling the pinhole generation from the dopants diffusion process by means of two annealing steps: (1) a pre-annealing step at high temperature after the intrinsic poly-Si deposition to visualize the formation of pinholes and (2) a post-annealing step for dopants activation/diffusion after ion-implantation. The pinhole density is quantified in the range of 1✕106 to 3✕108 cm2 by the TMAH selective etching approach. The passivation quality is discussed with respect to the pinhole density and the post-annealing thermal budget (TB) for dopants diffusion. The study shows that a moderate pinhole density does not induce doping profile variations that can be detectable by the coarse spatial resolution of ECV measurements. It is surprising that the existence of pinholes in a moderate density within our thickness fixed SiOx layer can effectively enhance the passivation qualities for both n+ and p+ poly-Si passivating contacts. We speculate the reason is due to the enhanced field-effect passivation at the pinhole surrounding. In fact, the variation of the passivation quality depends on the balance between a strengthened field-effect passivation and an excessive local Auger recombination, being both effects induced by the higher and deeper level of dopants diffused into the c-Si surface through the pinholes.

Silicon heterojunction (SHJ) solar cells have reached high power conversion efficiency owing to their effective passivating contact structures. Improvements in the optoelectronic properties of these contacts can enable higher device efficiency, thus further consolidating the commercial potential of SHJ technology. Here we increase the efficiency of back junction SHJ solar cells with improved back contacts consisting of p-type doped nanocrystalline silicon and a transparent conductive oxide with a low sheet resistance. The electrical properties of the hole-selective contact are analysed and compared with a p-type doped amorphous silicon contact. We demonstrate improvement in the charge carrier transport and a low contact resistivity (<5 mΩ cm²). Eventually, we report a series of certified power conversion efficiencies of up to 26.81% and fill factors up to 86.59% on industry-grade silicon wafers (274 cm², M6 size).

Monolithic perovskite/c-Si tandem solar cells have attracted enormous research attention and have achieved efficiencies above 30%. This work describes the development of monolithic tandem solar cells based on silicon heterojunction (SHJ) bottom- and perovskite top-cells and highlights light management techniques assisted by optical simulation. We first engineered (i)a-Si:H passivating layers for (100)-oriented flat c-Si surfaces and combined them with various (n)a-Si:H, (n)nc-Si:H, and (n)nc-SiOx:H interfacial layers for SHJ bottom-cells. In a symmetrical configuration, a long minority carrier lifetime of 16.9 ms was achieved when combining (i)a-Si:H bilayers with (n)nc-Si:H (extracted at the minority carrier density of 1015 cm-3). The perovskite sub-cell uses a photostable mixed-halide composition and surface passivation strategies to minimize energetic losses at charge-transport interfaces. This allows tandem efficiencies above 23% (a maximum of 24.6%) to be achieved using all three types of (n)-layers. Observations from experimentally prepared devices and optical simulations indicate that both (n)nc-SiOx:H and (n)nc-Si:H are promising for use in high-efficiency tandem solar cells. This is possible due to minimized reflection at the interfaces between the perovskite and SHJ sub-cells by optimized interference effects, demonstrating the applicability of such light management techniques to various tandem structures.

Passivating contacts are crucial for realizing high-performance crystalline silicon solar cells. Herein, contact formation by plasma-enhanced chemical vapor deposition (PECVD) followed by an annealing step is focused on. Poly-SiO_x passivating contacts by combining plasma-assisted N₂O-based oxidation of silicon (PANO-SiO_x) with a thin film of phosphorus (n⁺) or boron (p⁺)-doped hydrogenated amorphous silicon oxide (a-SiO_x:H) are manufactured. Postannealing is conducted for transitioning a-SiO_x:H into poly-SiO_x. The aim is to achieve a contact with low absorption and high-quality passivation. It is demonstrated that by tuning the plasma oxidation process time and power, the PANO-SiO_x thickness and its passivation quality can be controlled. A higher SiO₂ content is observed in PANO-SiO_x than in the nitric acid oxidation of silicon (NAOS-SiO_x) counterpart. PANO-SiO_x acts as a stronger diffusion barrier for both boron and phosphorus atoms compared to NAOS-SiO_x, affecting the dopant distribution during annealing. Implied open-circuit voltages up to 751 and 710 mV for n⁺ and p⁺ flat symmetric samples, respectively, are demonstrated. With respect to standard thermally grown SiO₂ tunneling oxide combined with (in/ex)situ-doped low-pressure chemical vapor deposition poly-Si, this study presents a simple alternative for manufacturing passivating contact fully based on PECVD processes.

Silicon heterojunction (SHJ) solar cells have achieved a record efficiency of 26.81% in a front/back-contacted (FBC) configuration. Moreover, thanks to their advantageous high V_OC and good infrared response, SHJ solar cells can be further combined with wide bandgap perovskite cells forming tandem devices to enable efficiencies well above 33%. In this study, we present strategies to realize high-efficiency SHJ solar cells through combined theoretical and experimental studies, starting from the optimization of Si-based thin-film layers to the implementation of electrodes with reduced indium and silver usage. Advanced opto-electrical simulations, which enable comprehensive theoretical understandings of the main physical mechanisms governing carriers’ collection and light management, provide clear pathways for device designs and experimental optimizations. We present the fabricated FBC-SHJ solar cells in both monofacial and bifacial configurations with the best efficiencies of 24.18% and 23.25%, respectively. We point out that to achieve optimum device performance, the compositional materials should be holistically optimized and evaluated as part of the contact stacks with adjacent layers. As an outlook beyond the classical FBC-SHJ solar cell architecture, we propose various novel SHJ-based solar cell architectures. Their potential performance was assessed and compared via rigorous opto-electrical simulations and a maximal efficiency of 27.60% was simulated for FBC-SHJ solar cells featuring localized contacts.

We introduce a novel simulation tool capable of calculating the energy yield of a PV system based on its fundamental material properties and using self-consistent models. Thus, our simulation model can operate without measurements of a PV device. It combines wave and ray optics and a dedicated semiconductor simulation to model the optoelectronic PV device properties resulting in the IV-curve. The system surroundings are described via spectrally resolved ray tracing resulting in a cell resolved irradiance distribution, and via the fluid dynamics-based thermal model, in the individual cell temperatures. A lumped-element model is used to calculate the IV-curves of each solar cell for every hour of the year. These are combined factoring in the interconnection to obtain the PV module IV-curves, which connect to the inverter for calculating the AC energy yield. In our case study, we compare two types of 2 terminal perovskite/silicon tandem modules with STC PV module efficiencies of 27.7% and 28.6% with a reference c-Si module with STC PV module efficiency of 20.9%. In four different climates, we show that tandem PV modules operate at 1–1.9 °C lower yearly irradiance weighted average temperatures compared to c-Si. We find that the effect of current mismatch is significantly overestimated in pure optical studies, as they do not account for fill factor gains. The specific yields in kWh/kWp of the tandem PV systems are between −2.7% and +0.4% compared to the reference c-Si system in all four simulated climates. Thus, we find that the lab performance of the simulated tandem PV system translates from the laboratory to outdoors comparable to c-Si systems.

In this chapter, we have reviewed candidates for further enhancement of cell efficiencies beyond those of today's mainstream PERC cells, with a focus on technological aspects rather than, e.g. cost. Regarding silicon single junctions, the prevalent theme is the use of carrier-selective passivating contacts, CSPCs. Of these, silicon heterojunction and polysilicon-on-silicon oxide (TOPCon/POLO) are most advanced and have enabled record high efficiencies above and close to 26%, respectively, on n-type silicon wafers. Further important topics are bifacial cell designs, which can be applied to different PV technologies. Single-side efficiencies above 25% have been achieved on bifacial TOPCon and bifacial SHJ solar cells. With proven bankability, bifacial PV products can be expected to gain more momentum in future development. In contrast, contacts based on metal compounds have yielded remarkable results in the last decade, yet failing to clearly evidence a significant advantage compared to the ones based on silicon. Further research is needed to unravel the material combination that would enable the long-awaited ultimate passivating contact for Si solar cells.

The second major topic are tandem and multijunction cells. This is the technology to move beyond the ultimate efficiency barrier of 29.4% for silicon PV and indeed, efficiencies well above 29% have been demonstrated in the lab for Si-based tandems. We have reviewed the current state of the art in lead halide perovskite-silicon tandems as well as III-V/silicon tandems. The former have reached a record PCE of 32.5% in monolithically integrated 2-terminal tandems, while III-V/Si 2T tandems currently stand at 23.4%. However, in III-V-Si devices, the number of absorbers has already been increased further, to three: in triple junction III-V/III-V/Si cells, PCEs of 35.9% have been realized with both 2T and 4T architectures. With a substantially higher cost for the III-V technology as compared to perovskites, but still inferior long-term stability in perovskites, as well as challenges in upscaling for both technologies, it remains to be seen which one of these technologies will gain an advantage. It should be mentioned that an important difference between reported silicon single junction and tandem/multijunction record devices is the cell area: while the single junction Si record devices have "industrial-size" active areas of several tens of cm2 or even full wafers, record tandem cells are lab-scale 1-4 cm2. Thus, up-scaling of tandem cells will remain an important topic in the near future.

At any rate, it can be expected that the exponential growth of PV as well as the diversity of applications (utility, rooftop and BIPV, agri-PV, etc.) will create ample opportunity for the market entry of quite a few of the mentioned technologies, and even for entirely new concepts such as three-terminal tandems or, at the module level, integrated PV and storage systems.