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Influence of passivating interlayers on the carrier selectivity of MoOx contacts for c-Si solar cells

Journal Article (2024)
Authors

Mike Tang Soo Kiong Ah Sen (TU Delft - Photovoltaic Materials and Devices, TNO)

Gaby Janssen (TNO)

Agnes Mewe (TNO)

Paula Bronsveld (TNO)

Jimmy Melskens (AIKO Energy Netherlands B.V., TNO)

Fatemeh Hashemi (TNO)

P. Procel Moya (TU Delft - Photovoltaic Materials and Devices)

Arthur Weeber (TU Delft - Photovoltaic Materials and Devices, TNO)

Research Group
Photovoltaic Materials and Devices
To reference this document use:
https://doi.org/10.1051/epjpv/2024030
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Publication Year
2024
Language
English
Research Group
Photovoltaic Materials and Devices
Volume number
15
DOI:
https://doi.org/10.1051/epjpv/2024030
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Abstract

The application of molybdenum oxide (MoOx) as a hole-selective contact for silicon-based solar cells has been explored due to superior optical transmittance and potentially leaner manufacturing compared to fully amorphous silicon-based heterojunction (SHJ) devices. However, the development of MoOx contacts has been hampered by their poor thermal stability, resulting in a carrier selectivity loss and an S-shaped IV curve. The aim of this study is to understand the influence of different passivating interlayers on the carrier selectivity of hole-selective MoOx contacts for crystalline silicon (c-Si) solar cells. We highlight the effect of different interlayers on the surface passivation quality, contact selectivity, and the thermal stability of our MoOx-contacted devices. The interlayers studied are intrinsic hydrogenated amorphous silicon (a-Si:H(i)), thermally grown ultrathin SiO2, and a stack consisting of an ultrathin SiOy and Al2O3 layer. Additionally, we simulate the interacting interlayer properties on the carrier selectivity of our MoOx contacts using a simplified model. Among these interlayers, the Al2O3/SiOy stack shows to be a promising alternative to SiO2 by enabling efficient transport of holes while being able to sustain an annealing temperature of at least 250 °C underlining its potential in module manufacturing and outdoor operation.