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The nature of silicon PN junction impedance at high frequency

Journal Article (2025)
Authors

David A. van Nijen (TU Delft - Photovoltaic Materials and Devices)

P.A. Procel Moya (TU Delft - Photovoltaic Materials and Devices)

R.A.C.M.M. van Swaaij (TU Delft - Photovoltaic Materials and Devices)

M Zeman (TU Delft - Photovoltaic Materials and Devices)

Olindo Isabella (TU Delft - Photovoltaic Materials and Devices)

P. Manganiello (TU Delft - Photovoltaic Materials and Devices)

Research Group
Photovoltaic Materials and Devices
To reference this document use:
https://doi.org/10.1016/j.solmat.2024.113383
More Info
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Publication Year
2025
Language
English
Research Group
Photovoltaic Materials and Devices
Volume number
282
DOI:
https://doi.org/10.1016/j.solmat.2024.113383
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Abstract

A thorough understanding of the small-signal response of solar cells can reveal intrinsic device characteristics and pave the way for innovations. This study investigates the impedance of crystalline silicon PN junction devices using TCAD simulations, focusing on the impact of frequency, bias voltage, and the presence of a low–high (LH) junction. It is shown that the PN junction exhibits the behavior of a parallel resistor–capacitor circuit (RC-loop) with fixed element values at low frequencies, but undergoes relaxation in both resistance Rj and capacitance Cj as frequency increases. Moreover, it is revealed that the addition of a LH junction impacts the impedance by altering Rj, Cj, and the series resistance Rs. Finally, while various publications on solar-cell impedance model the LH junction using an RC-loop, the findings in this study indicate that such a model does not accurately represent the underlying physics. Instead, this approach is likely compensating for the frequency-dependent behavior of Rj and Cj.