CH
C. Han
27 records found
1
Reducing indium consumption in transparent conductive oxide (TCO) layers is crucial for mass production of silicon heterojunction (SHJ) solar cells. In this contribution, optical simulation-assisted design and optimization of SHJ solar cells featuring MoOx hole collect
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Silicon heterojunction (SHJ) solar cells have achieved a record efficiency of 26.81% in a front/back-contacted (FBC) configuration. Moreover, thanks to their advantageous high VOC and good infrared response, SHJ solar cells can be further combined with wide bandgap per
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Monolithic perovskite/c-Si tandem solar cells have attracted enormous research attention and have achieved efficiencies above 30%. This work describes the development of monolithic tandem solar cells based on silicon heterojunction (SHJ) bottom- and perovskite top-cells and highl
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Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to their excellent surface passivation quality and carrier selectivity. The eventual existence of pinholes within the ultra-thin SiOx layer is one of the key factors for carrier collec
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Passivating contacts are crucial for realizing high-performance crystalline silicon solar cells. Herein, contact formation by plasma-enhanced chemical vapor deposition (PECVD) followed by an annealing step is focused on. Poly-SiOx passivating contacts by combining plas
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Silicon heterojunction (SHJ) solar cells have reached high power conversion efficiency owing to their effective passivating contact structures. Improvements in the optoelectronic properties of these contacts can enable higher device efficiency, thus further consolidating the comm
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In this chapter, we have reviewed candidates for further enhancement of cell efficiencies beyond those of today's mainstream PERC cells, with a focus on technological aspects rather than, e.g. cost. Regarding silicon single junctions, the prevalent theme is the use of carrier-sel
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Crystalline silicon solar cells with passivating contacts based on doped poly-Si exhibit high optical parasitic losses. Aiming at minimizing these losses, we developed the oxygen-alloyed poly-Si (poly-SiOx) as suitable material for passivating contacts. From passivation point of
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A logical next step for achieving a cost price reduction per Watt peak of photovoltaics (PV) is multijunction PV devices. In two-terminal multijunction PV devices, the photo-current generated in each subcell should be matched. Intermediate reflective layers (IRLs) are widely empl
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Reducing indium consumption, which is related to the transparent conductive oxide (TCO) use, is a key challenge for scaling up silicon heterojunction (SHJ) solar cell technology to terawatt level. In this work, we developed bifacial SHJ solar cells with reduced TCO thickness. We
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Effects of (i)a-Si
H deposition temperature on high-efficiency silicon heterojunction solar cells
Excellent surface passivation induced by (i)a-Si:H is critical to achieve high-efficiency silicon heterojunction (SHJ) solar cells. This is key for conventional single-junction cell applications but also for bottom cell application in tandem devices. In this study, we investigate
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In the efficiency-driven photovoltaic (PV) industry, the market dominating crystalline silicon (c-Si) technology has been developing towards PV devices with carrier-selective passivating contacts (CSPCs). Especially, the silicon heterojunction (SHJ) solar cell, based on hydrogena
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Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoOx
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Bifacial (BF) copper-plated crystalline silicon solar cell is an attractive topic to concurrently reduce silver consumption and maintain good device performance. However, it is still challenging to realize a high aspect ratio (AR) of the metal fingers. Herein, a new type of hybri
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Erratum
High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells (ACS Appl. Mater. Interfaces (2019) 11:49 (45586−45595) DOI: 10.1021/acsami.9b14709)
The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10−3 Pa” should be intended as “Pa”. The authors regret for the mistake. These errors do not affect the conclusions of the work. The following errors needs to be corrected
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Low parasitic absorption and high conductivity enable (n)-type hydrogenated nanocrystalline silicon [(n)nc-Si:H], eventually alloyed with oxygen [(n)nc-SiOx:H], to be deployed as window layer in high-efficiency silicon heterojunction (SHJ) solar cells. Besides the appr
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Low activation energy (Ea) and wide bandgap (Eg) are essential for (p)-contacts to achieve effective hole collection in silicon heterojunction (SHJ) solar cells. In this work, we study Plasma-Enhanced Chemical Vapor Deposition p-type hydrogenated nanocrystal
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The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and back contacts. Here, we optimized tungsten-doped indium oxide (IWO) film deposited by radio frequency magnetron sputtering at room temperature. The opto-electrical properties of the
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Erratum
Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiOx/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)
The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10-3 Pa” should be intended as “Pa”. The following errors appear in the article. P8607. EXPERIMENTAL SECTION, 2.1. “2.50 × 10-3 Pa”, “1.6 × 10-5 Pa”, and “2.20 × 10-3 Pa” s
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In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultrathin SiOx/poly-Si, the appropriate implementation of transparent conductive oxide (TCO) layers is of vital importance. Considerable deterioration in passivation quality occurs fo
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