Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interface

Journal Article (2022)
Author(s)

L. Cao (TU Delft - Photovoltaic Materials and Devices)

P. Procel Moya (Universidad San Francisco de Quito, TU Delft - Photovoltaic Materials and Devices)

A. Alcañiz Moya (TU Delft - Photovoltaic Materials and Devices)

J. Yan (TU Delft - Photovoltaic Materials and Devices)

F.D. Tichelaar (Kavli institute of nanoscience Delft, TU Delft - QN/Afdelingsbureau)

E. Özkol (TU Delft - Photovoltaic Materials and Devices)

Y. Zhao (TU Delft - Photovoltaic Materials and Devices)

C. Han (TU Delft - Photovoltaic Materials and Devices)

G. Yang (TU Delft - Photovoltaic Materials and Devices)

Z. Yao (TU Delft - Photovoltaic Materials and Devices)

M. Zeman (TU Delft - Electrical Sustainable Energy)

R. Santbergen (TU Delft - Photovoltaic Materials and Devices)

L. Mazzarella (TU Delft - Photovoltaic Materials and Devices)

O. Isabella (TU Delft - Photovoltaic Materials and Devices)

Research Group
Photovoltaic Materials and Devices
Copyright
© 2022 L. Cao, P.A. Procel Moya, A. Alcañiz Moya, J. Yan, F.D. Tichelaar, E. Özkol, Y. Zhao, C. Han, G. Yang, Z. Yao, M. Zeman, R. Santbergen, L. Mazzarella, O. Isabella
DOI related publication
https://doi.org/10.1002/pip.3638
More Info
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Publication Year
2022
Language
English
Copyright
© 2022 L. Cao, P.A. Procel Moya, A. Alcañiz Moya, J. Yan, F.D. Tichelaar, E. Özkol, Y. Zhao, C. Han, G. Yang, Z. Yao, M. Zeman, R. Santbergen, L. Mazzarella, O. Isabella
Research Group
Photovoltaic Materials and Devices
Issue number
12
Volume number
31
Pages (from-to)
1245-1254
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Abstract

Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoOx layers must be mastered to obtain an efficient hole collector. Here, we show that the key to control the MoOx layer quality is the interface between the MoOx and the hydrogenated intrinsic amorphous silicon passivation layer underneath. By means of ab initio modelling, we demonstrate a dipole at such interface and study its minimization in terms of work function variation to enable high performance hole transport. We apply this knowledge to experimentally tailor the oxygen content in MoOx by plasma treatments (PTs). PTs act as a barrier to oxygen diffusion/reaction and result in optimal electrical properties of the MoOx hole collector. With this approach, we can thin down the MoOx thickness to 1.7 nm and demonstrate short-circuit current density well above 40 mA/cm2 and a champion device exhibiting 23.83% conversion efficiency.