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Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interface

Journal Article (2022)
Author(s)

Liqi Cao (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Paul Procel (Universidad San Francisco de Quito, TU Delft - Electrical Engineering, Mathematics and Computer Science)

Alba Alcañiz (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Jin Yan (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Frans Tichelaar (Kavli institute of nanoscience Delft, TU Delft - Applied Sciences)

Engin Özkol (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Yifeng Zhao (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Can Han (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Guangtao Yang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Zhirong Yao (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Miro Zeman (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Rudi Santbergen (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Luana Mazzarella (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Olindo Isabella (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Photovoltaic Materials and Devices
DOI related publication
https://doi.org/10.1002/pip.3638 Final published version
More Info
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Publication Year
2022
Language
English
Research Group
Photovoltaic Materials and Devices
Issue number
12
Volume number
31
Pages (from-to)
1245-1254
Downloads counter
494
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Abstract

Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoOx layers must be mastered to obtain an efficient hole collector. Here, we show that the key to control the MoOx layer quality is the interface between the MoOx and the hydrogenated intrinsic amorphous silicon passivation layer underneath. By means of ab initio modelling, we demonstrate a dipole at such interface and study its minimization in terms of work function variation to enable high performance hole transport. We apply this knowledge to experimentally tailor the oxygen content in MoOx by plasma treatments (PTs). PTs act as a barrier to oxygen diffusion/reaction and result in optimal electrical properties of the MoOx hole collector. With this approach, we can thin down the MoOx thickness to 1.7 nm and demonstrate short-circuit current density well above 40 mA/cm2 and a champion device exhibiting 23.83% conversion efficiency.