The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10−3 Pa” should be intended as “Pa”. The authors regret for the mistake. These errors do not affect the conclusions of the work. The following errors needs to be corrected in the article. Page 45587. EXPERIMENTAL SECTION, 2.1. “2.50 × 10−3 Pa” and “2.20 × 10−3 Pa” should be “2.50 Pa” and “2.20 Pa”, respectively. Page 45588. RESULTS AND DISCUSSION, 3.1. All the “... × 10−5 Pa” should be “... × 10−2 Pa”. The physical unit of the “10−5 Pa” in the x-axis of Figure 2 should also be “10−2 Pa”. The correct Figure 2 appears below: (Figure presented).

Broadband transparent conductive oxide layers with high electron mobility (μ_e) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In₂O₃ thin films with high μ_e (>60 cm² V^-1 s^-1) have been extensively investigated, the research regarding anion doping is still under development. In particular, fluorine-doped indium oxide (IFO) shows promising optoelectrical properties; however, they have not been tested on c-Si solar cells with passivating contacts. Here, we investigate the properties of hydrogenated IFO (IFO:H) films processed at low substrate temperature and power density by varying the water vapor pressure during deposition. The optimized IFO:H shows a remarkably high μ_e of 87 cm² V^-1 s^-1, a carrier density of 1.2 × 10²⁰ cm^-3, and resistivity of 6.2 × 10^-4 ω cm. Then, we analyzed the compositional, structural, and optoelectrical properties of the optimal IFO:H film. The high quality of the layer was confirmed by the low Urbach energy of 197 meV, compared to 444 meV obtained on the reference indium tin oxide. We implemented IFO:H into different front/back-contacted solar cells with passivating contacts processed at high and low temperatures, obtaining a significant short-circuit current gain of 1.53 mA cm^-2. The best solar cell shows a conversion efficiency of 21.1%.