A major challenge in multijunction devices is reduced light incoupling caused by interference fringes from optical microcavities. This paper reports a potential route to mitigate the interference effects with an effective front-window design. The concepts of interface scattering and grain scattering are implemented at the front side of superstrate tandem solar cells. A random texturing and periodic-hexagonal texturing approach on glass is used as interface scatterers. However, applying an interface scatterer alone is insufficient to eliminate the interference effects of optical cavities completely. Use of sputtered unintentionally doped zinc oxide (i-ZnO) or tin oxide (SnO) as grain scatterers stacked over random and periodic glass textures quenches the interference effects significantly. For a random textured glass substrate, a 1.5-μm thick i-ZnO layer could quench interference in the top cell, except for the effect of the optical cavity formed in the amorphous top cell. Hexagonal craters on glass, combined with a 0.9-μm thick i-ZnO layer, effectively mitigate fringes formed by all optical cavities in the device. This sample demonstrates the highest incoupled photon flux with 86% of photons entering the device. Use of a wide-bandgap grain scatterer, such as SnO, reduces parasitic absorption of high-energy photons while mitigating optical cavities. The design principles discussed in this work can be applied to any thin-film multijunction solar cells consisting of layers with contrasting refractive indices.

Multijunction devices are an effective way to increase the efficiency of solar cell. However, currently only expensive III-V technologies utilize the infrared part of the solar spectrum. To tackle this issue, this work explores the material properties of thin film amorphous hydrogenated germanium deposited by PECVD. It was found that high H₂ dilution rates, deposition temperatures of 275 °C, pressures of 3 to 4 mbar and a power density around 0.20 W/m² can achieve films with bandgaps of around 0.9 eV and activation energies above 450 meV, suggesting dense films with intrinsic behaviour. Regarding the mechanisms governing this behaviour, the results suggest that the performance of a-Ge:H is predominantly determined by mid-gap states, which are related to the high mobility of H during deposition within the a-Ge:H matrix. When small amounts of Si are introduced, the H atoms are fixed to the Si, reducing the defect density in the material.

Hybrid organic-inorganic perovskites (PVKs) offer exceptional optoelectronic performance, yet reproducible and scalable co-evaporation remains challenging. This study examines the interplay of factors affecting compositional control during three-source PVK deposition. We identify chamber pressure, precursor cross-contamination, and flux instability – especially from organic salts such as formamidinium iodide (FAI) – as major sources of variability. A critical influence is the occurrence of cross-reading, where omnidirectional evaporation of FAI contributes to the reading on the quartz crystal microbalance (QCM) sensors monitoring the inorganic precursors like caesium bromide (CsBr) and lead iodide (PbI₂) even though shielding is present. This effect, strongly dependent on FAI load, deposition rate, and QCM sensor position, erroneously inflates measured fluxes, leading to inaccurate rate control and unintentional compositional drift. Maintaining A-, B- and X-site stoichiometry therefore requires dynamic adjustment of precursor rates, particularly at higher deposition speeds where mean free path limitations come into play. We demonstrate the successful deposition of perovskite layers at a deposition speed of 27.8 nm min⁻¹ as the practical ceiling for the investigated Cs_xFA_1-xPb(I_1-xBr_x)₃ composition within our experimental framework. These findings highlight the delicate balance between deposition speed, precursor stability, and film quality, underscoring the need for improved delivery systems - such as continuous precursor feedthrough, multiple organic sources, alternative vapor transport or flash evaporation methods – to achieve reproducible, fast and large-scale fabrication of high-performance PVK films.

Periodic hexagonal microtexture arrays (also known as honeycombs) are successfully implemented for the first time in a superstrate glass configuration. Hexagonal textures on glass demonstrate an anti-reflective effect when compared to flat glass. It is shown that light scattering increases at the honeycomb interfaces with an increase in texture height and periodicity. The performance of the textures is demonstrated using thin-film single-junction PV devices based on an indirect bandgap semiconductor material, nanocrystalline silicon (nc-Si:H), which requires light trapping in the infrared region of the spectrum. Inspecting the nc-Si:H bulk absorber suggests a conformal, crack-free growth of crystals on the hexagonal arrays. Short-circuit current density (J_SC) increases with an increase in the aspect ratio of the superstrate, without compromising voltage and fill factor. The J_SC enhancement is attributed to a combined benefit of (i) the anti-reflective nature of developed textures, (ii) trapping light within the absorbing layer through multiple order diffraction at the front and (iii) reflection from a back reflector with adapted hexagonal morphology. With the above observations, a J_SC of 28.6 mA/cm² (photovoltaic conversion efficiency of 9.3 %) is achieved for a 5μm periodic texture with a height of 1μm (aspect ratio = 0.21). This is the highest reported J_SC for a single-junction nc-Si:H solar cell in a superstrate configuration without an external anti-reflection coating.

This work introduces a method for screening potential hotspots in monolithic interconnected thin-film silicon modules using injection-dependent electroluminescence (EL) imaging. The fraction of dark area of the cell in the low- and high-injection EL images, respectively, is used to extract the severity and localization information associated with a defect. For the first time, a factor, namely, severity-to-localization (SL), is introduced for each defect as the ratio of severity to localization. Further, defects are broadly classified as A, B, AB, and C modes. Mode A and Mode B are severe, where the former is a distributed defect across the cell, and the latter is a localized defect. In contrast, Mode C is a localized trivial defect. The severe defects that are neither entirely distributed within the cell area nor localized are classified as Mode AB. The SL factor values associated with A, B, AB, and C modes are ≈1, >4, between 1 and 4, and ≈1, respectively. Furthermore, the potential of four modes of defects for hotspot formation is tested following the IEC61215 standard. The hotspot endurance test results reveal that high SL factor defects, such as Mode B, always lead to hotspots, and low SL factor defects, such as Mode A and C, do not produce distinguishable hotspots. Similarly, Mode AB with a higher SL formed clear hotspots, and with a lower SL factor (<1.5) never formed hotspots. The proposed method applies to all thin-film technologies with monolithic interconnects and is, therefore, expected to gain significant attention.

Textured glass is used in a wide range of applications to improve optoelectrical performances, such as photovoltaics, biosensing, microfluidics, and photonics. Honeycomb textures have demonstrated an excellent performance in optical devices using crystalline silicon wafers as opaque substrates. As a pathway to translate these advantages to configurations implementing glass, hexagonal-shaped microsized craters (honeycombs) are made on glass in this study. We use photolithography combined with wet etching for this process. The relationship between photoresist mask design, glass–photoresist adhesion, wet-etching steps, and the mechanism of honeycomb formation is studied. It is demonstrated that the higher the isotropic nature of etching achieved, the deeper the hexagonal craters will be. The potential of hexagonal textures on glass to significantly reduce reflection to <8% over the entire spectral range is observed. Finally, hexagonal microsized textures with 5 μm periodicity and 1.01 μm depth that effectively diffuse 50% of the total transmitted light at near-infrared (1100 nm) wavelengths are developed.

Techniques to facilitate excellent optical yield are required to manufacture high-performing solar cells. In thin-film solar cells, light scattering with the help of textured interfaces increases the absorption path length of photons and reduces the reflection of the photovoltaic active layer. These textures should also facilitate the growth of crack-free thin-film layers, ensuring high efficiency in multijunction devices. This work explores three texturing methods for glass that have the potential to be integrated into solar cells in a superstrate configuration. A detailed study of sacrificial texturing on glass using i-ZnO ((Formula presented.)) and indium-doped tin oxide ((Formula presented.)) is presented. The optical interaction of these textures is correlated to their root-mean-square (RMS) roughness ((Formula presented.)). It is demonstrated that high optical scattering can be achieved for both (Formula presented.) and (Formula presented.) but at different (Formula presented.) regimes. A novel texture with superimposed morphology, named superimposed sacrificial texturing ((Formula presented.)), is created by combining (Formula presented.) and (Formula presented.) through sequential wet etching. The (Formula presented.) exhibits exceptional transmission and light scattering properties. Nanocrystalline silicon (nc-Si:H) single-junction solar cells were fabricated in a superstrate configuration to investigate the impact of these textures on indirect bandgap thin-film solar cells. The efficiency of solar cells on (Formula presented.) is nearly 0.57% and 1.52% (absolute) more than (Formula presented.) and (Formula presented.) solar cells, respectively. By superimposing two textures, solar cells can combine the advantages of enhanced optical performance with high-quality nc-Si:H material growth.

This study investigates the transparent conductive oxides (TCOs) as front contact for thin-film solar cell applications by developing a bilayer design that decouples the optical and electrical functionalities. The bilayer front contact structure combines hydrogenated indium oxide (IOH) and non-intentionally doped zinc oxide (ZnO) materials. This design achieves enhanced optoelectrical properties with a mobility of 120 cm²/Vs and a carrier density of 1.97·10¹⁹ cm^-3. Notably, the bilayer outperforms the expected average of its constituent layers in both transparency and conductivity, reflecting the benefits of optimized layer architecture. When integrated as the front electrode in a hydrogenated nanocrystalline silicon (nc-Si:H) solar cell, the IOH/ZnO bilayer yields a fill factor of 64.56 % and a power conversion efficiency of 7.85 %. When using an ITO front contact, the nc-Si:H solar cell reveals a fill factor of 56.27 % and an efficiency of 6.80 %. By successfully decoupling optical and electrical properties, the optimized IOH/ZnO bilayer offers a significant advancement over single-layer TCO configurations, presenting an innovative pathway for enhanced performance in thin-film solar cell technology.

Our study focuses on the optimization of front contact design by exploring a novel bilayer configuration that employs transparent conductive oxides (TCOs) to enhance the efficiency of thin-film silicon solar cells. The TCOs investigated include sputtered hydrogenated indium oxide (IOH), cerium-doped indium oxide (ICO), cerium and hydrogen co-doped indium oxide (ICOH), and intrinsic zinc oxide (i-ZnO). We highlight the suitability of these TCOs in a bilayer design, first analyzing their opto-electrical properties as monolayers and subsequently in bilayer configurations. The IOH/i-ZnO bilayer architecture, in particular, demonstrates promising opto-electrical properties on both flat glass and micro-textured glass substrates. IOH/i-ZnO on flat glass substrate demonstrates remarkable mobility (143.44 cm²/Vs) and a carrier concentration in the order of 10¹⁹cm^-3. The mean of reflectance (R) trends consistently exceeds 80%, while the mean of transmittance (T) trends falls below 20% beyond 500 nm. The interference effects within the bilayers are minimized for designs on micro-textured glass, preserving values within a desirable range. These findings represent an innovative approach to front contact design for thin-film silicon solar cells, emphasizing the potential of bilayer configurations to advance solar cell technology.

Photovoltaic (PV) panel installations in buildings and transportation hubs pose additional safety challenges as the glare from the panels can impose adverse impacts like flash blindness in human eyes. This study substantiates that polymer encapsulated thin film modules offer significantly low glare levels that are essential for building integrated and transport hub installations. In this work, the glare hazard potential associated with matt ethylene tetrafluoroethylene (ETFE)-based polymer sheet used as the frontsheet for the production of flexible thin amorphous silicon (a-Si) PV modules is studied and compared with standard PV glass used in crystalline silicon (c-Si) PV panels. The specular reflectance extracted from the measured total and diffuse reflectance for an angle of incidence (AOI) of 8° and the angular intensity distribution (AID) of specular reflectance measured for AOI ranging from 10° to 80° are utilized for glare assessment of the frontsheets. The mean value of specular reflectance extracted from the measured total and diffused reflectance is as low as 0.5% for the polymer frontsheet and is 4% for glass. The AID measurements suggest that the reflection from the polymer frontsheet is highly diffusive in nature in contrast to glass and the measured specular reflectance is always close to a magnitude lower than that from glass for all AOI. With the increase in AOI, the specular AID reflectance increases exponentially for glass to become as high as 40%, which is almost 20 times less than that from the polymer frontsheet for an AOI of 80°. Further, the c-Si test structure with glass and thin a-Si PV module with matt ETFE-based polymer as frontsheet showed similar specular reflectance trends as that of glass and the polymer frontsheet, respectively.

In this study, undoped hydrogenated amorphous silicon (a-Si:H) thin films deposited under moderate dilution ratios of silane by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) have been investigated using steady-state photoconductivity and improved dual beam photoconductivity (DBP) methods to identify changes in multiple gap states in annealed and light-soaked states. Four different gap states were identified in annealed state named as A, B, C, and X states. The peak energy positions of these Gaussian distributions are consistent with those recently identified by Fourier transform photocurrent spectroscopy (FTPS). After in situ light soaking, their density increases with different rates as peak energy positions and half-widths remain unaffected. The electron-occupied A and B states located below the dark Fermi level and their density and ratios in the annealed and light-soaked states correlate well with those defects detected by time-domain pulsed electron paramagnetic resonance (EPR) experiments. The A, B, and X states located closer to the middle of the bandgap anneal out at room temperature in dark and define the "fast"states. However, the C states show no sign of room temperature annealing such that they must define the "slow"states in undoped a-Si:H. The results found in this study indicate that the anisotropic disordered network is a more appropriate model than previously proposed defect models based on the continuous random network to define the nanostructure of undoped a-Si:H, where multiple defects, D0 and non-D0 defects, can be identified by using the improved DBP method.

Transparent conductive oxides (TCOs) are used as front electrode of thin film silicon (TF-Si) solar cells to increase power conversion efficiency. Metal oxides doped with different materials can be deployed as TCO. The preferred TCO is usually selected using a trade-off between transparency and conductivity. This work proposes a bi-layer front contact to address the limitation of this trade-off. IOH and i-ZnO are chosen as the best candidates for such architecture due to their good opto-electrical properties. A thin layer of IOH ensures good lateral conductivity and high transparency in the visible part of the solar spectrum. An additional i-ZnO layer provides minimized parasitic absorption losses along with low transverse resistivity. The best opto-electrical properties are achieved when deposition temperature and power density are set at 25°C and 1.5 W/cm², 200°C and 2 W/cm² for IOH and i-ZnO respectively.

Silicon heterojunction (SHJ) solar cells have achieved a record efficiency of 26.81% in a front/back-contacted (FBC) configuration. Moreover, thanks to their advantageous high V_OC and good infrared response, SHJ solar cells can be further combined with wide bandgap perovskite cells forming tandem devices to enable efficiencies well above 33%. In this study, we present strategies to realize high-efficiency SHJ solar cells through combined theoretical and experimental studies, starting from the optimization of Si-based thin-film layers to the implementation of electrodes with reduced indium and silver usage. Advanced opto-electrical simulations, which enable comprehensive theoretical understandings of the main physical mechanisms governing carriers’ collection and light management, provide clear pathways for device designs and experimental optimizations. We present the fabricated FBC-SHJ solar cells in both monofacial and bifacial configurations with the best efficiencies of 24.18% and 23.25%, respectively. We point out that to achieve optimum device performance, the compositional materials should be holistically optimized and evaluated as part of the contact stacks with adjacent layers. As an outlook beyond the classical FBC-SHJ solar cell architecture, we propose various novel SHJ-based solar cell architectures. Their potential performance was assessed and compared via rigorous opto-electrical simulations and a maximal efficiency of 27.60% was simulated for FBC-SHJ solar cells featuring localized contacts.

We extended the capabilities of our GenPro4 solar cell optical model, making it an even more powerful tool for nanotexture optimization. We show its application to thin-film CIGS, silicon, and perovskite/silicon tandem solar cells.

In this abstract an overview is presented of research performed in the DISCO project, on the development of a silicon-based high voltage multijunction device for autonomous solar to fuel applications.'

A logical next step for achieving a cost price reduction per Watt peak of photovoltaics (PV) is multijunction PV devices. In two-terminal multijunction PV devices, the photo-current generated in each subcell should be matched. Intermediate reflective layers (IRLs) are widely employed in multijunction devices to increase reflection at the interface between subcells to enhance current generation in the subcell(s) positioned before the IRL, in reference to the incident light. In this work, the results of over 65 multijunction devices are presented, in order to explore the effect of different current matching approaches. The influence of variations in absorber thickness as well as thickness variations of different IRLs based on silicon-oxide, various transparent conductive oxides (TCO), and metallic layers on all-silicon multijunction PV devices is studied. Specifically, hybrid, 2-terminal, monolithically integrated silicon heterojunction (SHJ) and thin film nanocrystalline silicon (nc-Si:H) and amorphous silicon (a-Si:H) tandem and triple junction devices are processed. Based on these experiments, certain design rules for optimal current matching operation in multijunction devices are formulated. Finally, taking these design rules into account, record all-silicon multijunction devices are processed. Conversion efficiencies close 15% and (Formula presented.) V are demonstrated for triple junction SHJ/nc-Si:H/a-Si:H devices. Such conversion efficiencies for a wireless, high-voltage wafer-based all-silicon 2-terminal multijunction PV device opens the way for efficient autonomous solar-to-fuel synthesis systems as well as other wireless innovative approaches in which the multijunction solar cell is used not only as a photovoltaic current-voltage generator, but also as an ion-exchange membrane, electrochemical catalysts, and/or optical transmittance filter.