Correction
Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiOx/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)
Can Han (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Guangtao Yang (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Paul Procel (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Luana Mazzarella (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Yifeng Zhao (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Stephan Eijt (TU Delft - Applied Sciences)
Henk Schut (TU Delft - Applied Sciences)
Miro Zeman (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Olindo Isabella (TU Delft - Electrical Engineering, Mathematics and Computer Science)
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Abstract
The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for which all “10-3 Pa” should be intended as “Pa”. The following errors appear in the article. P8607. EXPERIMENTAL SECTION, 2.1. “2.50 × 10-3 Pa”, “1.6 × 10-5 Pa”, and “2.20 × 10-3 Pa” should be read as “2.50 Pa”, “1.6 × 10-2 Pa”, and “2.20 Pa”, respectively. These errors do not affect the “RESULTS AND DISCUSSION” or “CONCLUSIONS” of this article.