Unlocking the potential of carrier-selective contacts

Abstract

Crystalline silicon (c-Si) solar cells are rapidly establishing new efficiency frontiers, with front/back-contacted (FBC) designs now exceeding 26.8 % power conversion efficiency (PCE) and interdigitated back-contacted (IBC) cells surger limitepassing 27 %. This progress is driving a shift from traditional FBC PERC architectures to high-performance TOPCon, SHJ, and IBC configurations, with carrier-selective contacts (CSCs) at the core of these breakthroughs. In this work, we identify three critical factors underpinning CSC effectiveness: the work function of contact layers, energy barriers at heterointerfaces, and energy alignment across the stack of layers forming the CSC. By using advanced numerical simulations, we establish a framework for evaluating and optimizing CSC designs, including state-of-the-art poly-Si, SHJ, and dopant-free structures. We also introduce novel architectures based on TCO materials with potentially simpler manufacturing processes. Our simulations reveal that advanced FBC structures, can reach PCEs up to 28 % deploying localized CSCs architecture. In optimized IBC configurations, efficiencies as high as 28.64 % are achievable. For both, FBC and IBC configurations patterning limitations remain a barrier to theoretical efficiency peaks. Future advances in precision patterning could further close this gap, pushing c-Si solar cells closer to their intrinsic limits. This study provides a roadmap for high-efficiency CSC integration in next-generation c-Si solar cells, establishing pathways to achieve performance over 28 % and accelerating the evolution of photovoltaic technology.