Crystalline silicon solar cells with thin poly-SiOx carrier-selective passivating contacts for perovskite/c-Si tandem applications
Manvika Singh (TU Delft - Photovoltaic Materials and Devices)
A. Amarnath (TU Delft - EKL Processing)
Fabian Wagner (Student TU Delft)
Yifeng Zhao (TU Delft - Photovoltaic Materials and Devices)
G. Yang (TU Delft - Photovoltaic Materials and Devices)
L. Mazzarella (TU Delft - Photovoltaic Materials and Devices)
Arthur Weeber (TNO - Energy Transition, TU Delft - Photovoltaic Materials and Devices)
M Zeman (TU Delft - Electrical Sustainable Energy)
O. Isabella (TU Delft - Photovoltaic Materials and Devices)
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Abstract
Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit whereas perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiOx (poly-SiOx) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high temperature poly-SiOx CSPCs and demonstrate novel high efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiOx. Then we optimized the passivation properties of p-type and n-type doped poly-SiOx CSPCs. Here, we have optimized the p-type doped poly-SiOx CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively.