Electrochemical Control over Electron Density of InAs Quantum Dots

Abstract

Control over the electron density and conductivity is a cornerstone of semiconductor technology. Here, we report electrochemical control over electron density and conductivity in films of InAs colloidal quantum dots (QDs) capped with ethanedithiol ligands. The quantum-confined twofold degenerate 1S1/2(e) electron state can be reversibly and completely filled. Increasing the electron population yields four bleach features in the optical-absorption spectrum associated transitions to the 1S1/2(e) state, and state-resolved electronic conductivity which follows the 1S1/2(e) density of states, reaching a maximum of 0.45 S/m at 0.5 electrons per QD. The absence of 1P(e) bleach features and state-resolved conductivity imply a wide separation between the 1S1/2(e) and 1P(e) states resulting in electronic transport between 1S(e) states exclusively. The reversible electrochemistry of InAs QDs films allows determination of the absolute energy levels. InAs QDs of 4.2 nm in edge length and capped with ethanedithiol ligands are natively n-doped with the Fermi level at -4.6 eV, the 1S1/2(e) state at -4.28 eV and the 1S3/2(h) state at -5.54 eV vs vacuum. This work establishes a way to precisely control the charge carrier density and conductivity and gives insights into the charge transport properties and electronic structure of InAs QD films, opening the possibility of making devices with InAs QDs in which the charge carrier density is precisely controlled electrochemically.