InP colloidal quantum dots for visible and near-infrared photonics
G.P.F. Gonçalves Pereira Fonseca DeAl (TU Delft - ChemE/Opto-electronic Materials)
R.F. Ubbink (TU Delft - ChemE/Opto-electronic Materials)
M. Stam (TU Delft - ChemE/Opto-electronic Materials)
I. du Fossé (TU Delft - ChemE/Opto-electronic Materials)
A. J. Houtepen (TU Delft - ChemE/Opto-electronic Materials)
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Abstract
Owing to their tunable band gap, high absorption coefficient, narrow emission linewidths and unrestricted composition, InP-based colloidal quantum dots (QDs) have become industrially relevant for visible and near-infrared photonic technologies. Although their development has so far been strongly driven by their suitability for green and red light-emitting diodes, the spectrum of applications for this class of materials is much broader. This Review covers the multidisciplinary field of InP-based QDs from its genesis in the mid-1990s to date, drawing on relevant knowledge from other classes of QDs and from III–V semiconductors as a whole. We discuss the optoelectronic properties of InP QDs, their fabrication, their defects and passivation strategies and the design of InP-based QD heterostructures. Finally, we outline the technological status of these QDs for various photonic applications.