Mv
M. van Leeuwen
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1 records found
1
Journal article
(2025)
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R.F. Ubbink, Tom Speelman, Daniel Arenas Esteban, M. van Leeuwen, M. Stam, Sara Bals, Gilles A. De Wijs, Ernst R H van Eck, A.J. Houtepen
InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.
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InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.