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Near-Unity Photoluminescence Quantum Yield of Core-Only InP Quantum Dots via a Simple Postsynthetic InF3 Treatment

Journal Article (2024)
Author(s)

Maarten Stam (TU Delft - ChemE/Opto-electronic Materials)

G.P.F. Gonçalves Pereira Fonseca DeAl (TU Delft - ChemE/Opto-electronic Materials)

Reinout F. Ubbink (TU Delft - ChemE/Opto-electronic Materials)

Lara M. van der Poll (TU Delft - ChemE/Opto-electronic Materials)

Y.B. Vogel (TU Delft - ChemE/Opto-electronic Materials)

H. Chen (TU Delft - ChemE/Opto-electronic Materials)

Luca Giordano (Universiteit Gent)

Pieter Schiettecatte (Universiteit Gent)

Zeger Hens (Universiteit Gent)

AJ Houtepen (TU Delft - ChemE/Opto-electronic Materials)

Research Group
ChemE/Opto-electronic Materials
DOI related publication
https://doi.org/10.1021/acsnano.4c03290
More Info
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Publication Year
2024
Language
English
Research Group
ChemE/Opto-electronic Materials
Issue number
22
Volume number
18
Pages (from-to)
14685-14695
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Abstract

Indium phosphide (InP) quantum dots (QDs) are considered the most promising alternative for Cd and Pb-based QDs for lighting and display applications. However, while core-only QDs of CdSe and CdTe have been prepared with near-unity photoluminescence quantum yield (PLQY), this is not yet achieved for InP QDs. Treatments with HF have been used to boost the PLQY of InP core-only QDs up to 85%. However, HF etches the QDs, causing loss of material and broadening of the optical features. Here, we present a simple postsynthesis HF-free treatment that is based on passivating the surface of the InP QDs with InF3. For optimized conditions, this results in a PLQY as high as 93% and nearly monoexponential photoluminescence decay. Etching of the particle surface is entirely avoided if the treatment is performed under stringent acid-free conditions. We show that this treatment is applicable to InP QDs with various sizes and InP QDs obtained via different synthesis routes. The optical properties of the resulting core-only InP QDs are on par with InP/ZnSe/ZnS core-shell QDs, with significantly higher absorption coefficients in the blue, and with potential for faster charge transport. These are important advantages when considering InP QDs for use in micro-LEDs or photodetectors.