From 2022, industrial wastewater discharge regulations in South Korea will replace chemical oxygen demand (CODMn) with total organic carbon (TOC). A shift from CODMn to TOC is a pioneering change in protecting water bodies from organic contaminants. However, several industries are struggling to meet these TOC requirements even though their effluents met the CODMn limits. Effluent CODMn/TOC ratios (1.28 ± 0.64) found in our study were lower than the CODMn/TOC coefficients (1.33–1.80) suggested by the Ministry of Environment in South Korea. Aliphatic and particulate organic matter contents in effluents likely influenced the CODMn/TOC ratio. Regardless of the industrial category, dissolved organic carbon often consists of low molecular weight neutrals, hydrophobic organic carbon, and protein-like substances in raw and treated industrial wastewaters. The present study also revealed that TOC and CODMn represented different organic matter fractions in the paper mill and oil refinery wastewater, whereas the industrial park wastewater showed similar dissolved organic matter characteristics. Specifically, CODMn was effective in the determination of humic content in paper mill wastewater but was underestimated in oil refinery wastewater. Additionally, only paper mill effluents exceeded the TOC requirements (4 of 6 samples) and required an additional post-treatment process owing to higher organic loads.@en

In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias.@en