Self-powered UV sensing has enormous potential in military and civilian applications. However, achieving high responsivity and fast response/recovery time presents significant challenges. Self-powered photodetectors (PDs) have several advantages over traditional PDs, including higher sensitivity, lower power consumption, and simpler design. This study introduces a breakthrough self-powered PD that uses a Schottky junction of 2D α-MoO₃/iridium (Ir)/Si ultrathin film to detect 365 nm light at 0 V bias through using atomic layer deposition (ALD) and sputtering systems. The PD response is enhanced by plasmonic Ir-induced hot carriers, enabling detection in a mere 0.1 ms. Incorporating a 4 nm Ir layer boosts the responsivity from 0 to 34 A W⁻¹, and the external quantum efficiency is elevated from 0 to 7E11 under 365 nm light illumination. It also has a high I_ON/I_OFF ratio of 11.22E4 at 0 V. These results make the MoO₃/4 nm Ir/Si structure an interesting option for self-powered PDs with high efficiency, and the use of a simple ALD system for large-scale fabrication of 2D α-MoO₃ on hot carrier Ir plasmonic layer. The findings of this research hold tremendous promise in the field of UV sensing and can lead to exciting developments in military and civilian technology.

Photonic crystal (PhC) has been studied for their potential to improve the efficiency of Cu₂ZnSnS₄ solar cells by increasing the generated photocurrent by integrating it as a back reflector with almost zero transmission through the absorption active zone of the solar cell. It was found that the thickness of PhC layers greatly affects the width of the photonic bandgap and that increasing the thickness of VO₂ causes it to shift to a higher wavelength range. The PhC layers were added at the back side of the solar cell in two different configurations: (Monoclinic (M) VO₂/TiO₂) and (Tetragonal (T) VO₂/TiO₂) via SCAPS model. The study found that the (M VO₂/TiO₂) configuration led to an enhancement of the device's efficiency from 11.02 to 12.79%, while the (T VO₂/TiO₂) reaches 16.88%. The study concluded that the PhC layers enhance the light-matter coupling and photonic coupling and improvement in the device's performance.

This study was on the optoelectronic properties of multilayered two-dimensional MoS₂ and WS₂ materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO₂, and O₂ environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS₂ (n-type)/Si (p-type) and WS₂ (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10⁵ cm⁻² for WS₂ thin film. The IV electrical results revealed that WS₂ is more reactive than MoS₂ film under different gas stimuli. WS₂ film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10² cm²/V. WS₂ film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO₂ environment was observed. Additionally, the external quantum efficiency of WS₂ revealed a remarkable enhancement in the CO₂ environment of 1.62 × 10⁸ compared to MoS₂ film with 6.74 × 10⁶. According to our findings, the presence of CO₂ on the surface of WS₂ improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS₂ as a photodetector under gas stimuli for future optoelectronic applications.

Artificial periodic structures drew a lot of attention because of their ability to be built with novel acoustic features. A novel nanostructured phononic superlattice (NPhS) based two-dimensional multilayer structure as a high-sensitive multichannel liquid sensor that provided bright multichannel band gap windows has been introduced. Theoretically, the designed structure is composed of [(MoS₂/PtSe₂)⁴] NPhS with a cavity filled with different concentrations of Ethylene Glycol at room temperature toward acoustic bandgap engineering multichannel sensor. We examined the interaction of acoustic waves with nano and bulk phononic superlattice (PhS) structures. In addition, we studied the effect of using different analyte layer thicknesses on the resonance peaks that appeared inside the band gaps. Many sharp resonance peaks appeared in multi-band gaps, which introduced high sensitivity, Q-factor, and figure of merit (FOM) values for each concentration of Ethylene Glycol. Furthermore, the effect of resonance peaks' full width at half maximum (FWHM) on the Q-factor of the NPhS multichannel sensor has been studied. From our results, the relation between the sensitivity of our multichannel sensor and the resonance frequency of each concentration shows a linear behavior. The highest sensitivity was obtained for a 1.00 m% concentration of 0.21 (GHz/(kg/m³)) at a resonance frequency value of 0.21 THz. In addition, the NPhS multichannel sensor recorded the highest Q-factor for 0.8069 m% with a value of 1744 and the highest FOM for 0.3819 m% with a value of 0.05988 (m³/kg). Moreover, we studied the effect of temperature on the sensitivity of the NPhS multichannel sensor. We showed the highest sensitivity value of 1.79 (GHz/^o C) at 10 °C towards Ethylene Glycol. Further, the dispersion relation of an acoustic wave propagating inside perfect and defected nano and bulk PhS structures has been introduced. Our proposed multichannel liquid sensor can introduce a novel sensitivity at Terahertz frequency ranges.

The greenhouse effect is involving global heating and climate change within the world. Carbon dioxide (CO₂)is one of the major gas at the origin of this effect, but also the byproduct of human activity. Therefore, monitoring the indoor/outdoor CO₂ emission by gas sensors is one of the priorities for environmental preservation. In this paper, the sensing performance of CO₂ towards two different O-rich films have been studied; graphene oxide (GO)and vanadium dioxide (VO₂). The preparation of GO film has been carried out by spray pyrolysis on fluorine tin oxide (FTO)prepared by the modified Hummers method. While the VO2 film has been sol-gel spin-coated on a glass substrate. Both films have been characterized using XRD, SEM and electrical properties. The CO₂ gas sensing mechanism and the role of oxygen vacancies in VO₂ are addressing. The oxygen functional groups in GO play a main role in the CO₂ gas the sensitivity level and response time. Their gas sensing performances have been investigated based on measuring the response vs recovery time, dynamic response curve analysis and sensitivity. In order to better understand the sensing mechanism, characterization has been done with different gas concentrations. Both GO and VO₂ based CO₂-sensors are acted as an n-type sensor. Sensing behavior of GO at RT has explained to be mainly mediated by the oxygen functional groups and a wide range of active sites. In the other hand, VO₂ contains oxygen vacancies and more defect sites which play a main role in the RT sensing activity and low recovery time.