In order to investigate the influence of film growth conditions on the transport properties of step-edge junctions, YBa2Cu3O7-δ films were deposited on high-quality substrate steps by DC-sputtering at two different substrate temperatures and by off-axis laser ablation. RSJ-like junction properties and a low (1σ)-spread of the critical current density Jc (4.2 K) of 17% along one step were obtained for laserablated junctions. The transport properties of the differently prepared junctions correlated with the microstructure of the step region. This, in turn, might result from the large differences in surface diffusion during film growth.