Stimulated terahertz emission due to electronic Raman scattering in silicon

Terahertz raman laser based on silicon doped with phosphorus

Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

Stimulated terahertz stokes emission of silicon crystals doped with antimony donors

Silicon donor and Stokes terahertz lasers

Laser transitions under resonant optical pumping of donor centres in Si:P

Stimulated THz emission from resonant intra-center optical pumped Si:P and Si:Bi

Si-based shallow donor far-infrared lasers

Stimulated THz emission from Si:P and Si: Bi under resonant intra-centre optical pumping

Stimulated THz emission from group V donors in silicon under intracenter photoexcitation

The emission spectra of optically pumped Si-based THz lasers

The Physics of optically pumped semiconductor bulk lasers for the 5 - 15 THz frequency range.

RF mismatch of THz switching MQW structures.

The p-Ge THz laser: properties under pulsed and mode locked operation.

The optical properties of the p-Ge THz laser with mesh outcoupler.

The pulsed and mode locked p-Ge THz laser: wavelength dependent properties.

Frequency dependent properties of the mode locked p-Ge THz laser.

Technical aspects of the mode locked p-Ge hot hole laser

Wavelength dependent properties of the pulsed and mode locked p-Ge THz laser

The optical output of the mode locked p-Ge hot hole laser