Stimulated terahertz emission due to electronic Raman scattering in silicon

Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

Terahertz raman laser based on silicon doped with phosphorus

Stimulated terahertz stokes emission of silicon crystals doped with antimony donors

Silicon donor and Stokes terahertz lasers

Laser transitions under resonant optical pumping of donor centres in Si:P

Stimulated THz emission from resonant intra-center optical pumped Si:P and Si:Bi

Stimulated THz emission from Si:P and Si: Bi under resonant intra-centre optical pumping

Si-based shallow donor far-infrared lasers

The emission spectra of optically pumped Si-based THz lasers

Stimulated THz emission from group V donors in silicon under intracenter photoexcitation

The Physics of optically pumped semiconductor bulk lasers for the 5 - 15 THz frequency range.

The p-Ge THz laser: properties under pulsed and mode locked operation.

RF mismatch of THz switching MQW structures.

Frequency dependent properties of the mode locked p-Ge THz laser.

The optical properties of the p-Ge THz laser with mesh outcoupler.

The pulsed and mode locked p-Ge THz laser: wavelength dependent properties.

Wavelength dependent properties of the pulsed and mode locked p-Ge THz laser

Technical aspects of the mode locked p-Ge hot hole laser

Gain of the mode locked p-Ge laser in the low field region