As technology scaling enters the nanometer regime, device aging effects cause quality and reliability issues in CMOS Integrated Circuits (ICs), which in turn shorten its lifetime. Evaluating system aging through circuit simulations is very complex and time consuming. In this thesis, a framework is proposed, which allows for the evaluation of long-term aging effects of ICs and the corresponding measures to counteract premature failure. The focus of this work lies in the abstraction of low-level aging models to system-level models, in order to facilitate swift high-level simulation, without any knowledge of underlying circuit dynamics. Two major aging mechanisms, namely Negative Bias Temperature Instability (NBTI) and Channel Hot Carrier (CHC) degradation are considered for analysis. System-level aging management is performed with the prototype of a System-on-Chip (SoC) including a Management Unit (MU), which counteracts aging by employing Dynamic Voltage Scaling (DVS), Dynamic Frequency Scaling (DFS), and Adaptive Body Biasing (ABB). The simulation platform prototype is based on System-C AMS and a 65-nm technology library. This SoC simulation computes path delay using characterized models, which represent the aged behaviour of individual circuit elements. Results show that the obtained values are within 2% of circuit-level simulation values at the cost of a simulation time which is 15x lesser than conventional circuit simulators (e.g. Cadence NCSim).