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document
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van Riggelen, F. (author)
In this thesis, research is presented that explores the characteristics and possibilities of hole spin qubits defined in quantum dots in a germanium/silicon germanium heterostructure. The results of the most important experiments are concerned with distributing quantum information: either by entangling three qubits as the basis for the phase...
doctoral thesis 2024
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document
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Lawrie, W.I.L. (author)
Quantum computers based on semiconductor quantum dots are proving promising contenders for large scale quantum information processing. In particular, group IV based semiconductor hosts containing an abundance of nuclear spin-zero isotopes have made considerable headway into fulfilling the requirements of a universal quantum computer. Silicon (Si...
doctoral thesis 2022
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document
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Hendrickx, N.W. (author)
Spin quantum bits (qubits) defined in semiconductor quantum dots have emerged as a promising platform for quantum information processing. Various semiconductor materials have been studied as a host for the spin qubit. Over the last decade, research focussed on the group‐IV semiconductor silicon, owing to its compatibility with semiconductor...
doctoral thesis 2021
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document
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Lodari, M. (author), Hendrickx, N.W. (author), Lawrie, W.I.L. (author), Hsiao, T. (author), Vandersypen, L.M.K. (author), Sammak, A. (author), Veldhorst, M. (author), Scappucci, G. (author)
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very...
journal article 2021
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