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Dogan, I. (author), Kramer, N.J. (author), Westermann, R.H.J. (author), Dohnalova, K. (author), Smets, A.H.M. (author), Verheijen, M.A. (author), Greogorkiewicz, T. (author), Van de Sanden, M.C.M. (author)
We demonstrate a method for synthesizing free standing silicon nanocrystals in an argon/silane gas mixture by using a remote expanding thermal plasma. Transmission electron microscopy and Raman spectroscopy measurements reveal that the distribution has a bimodal shape consisting of two distinct groups of small and large silicon nanocrystals with...
journal article 2013
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Sharma, K. (author), Ponomarev, M.V. (author), Verheijen, M.A. (author), Kunz, O. (author), Tichelaar, F.D. (author), Van de Sanden, M.C.M. (author), Creatore, M. (author)
In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The...
journal article 2012
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Illiberi, A. (author), Kudlacek, P. (author), Smets, A.H.M. (author), Creatore, M. (author), Van de Sanden, M.C.M. (author)
We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...
journal article 2011
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Kudlacek, P. (author), Van de Sanden, M.C.M. (author), Zeman, M. (author)
We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for...
journal article 2010
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...
journal article 2009
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